Strain Engineering 2D MoS\(_{2}\) with Thin Film Stress Capping Layers

• Published in: arXiv.org
• Main Authors: Peña, Tara, Chowdhury, Shoieb A, Azizimanesh, Ahmad, Sewaket, Arfan, Askari, Hesam, Wu, Stephen M
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 14.07.2021
• Subjects: CMOS; Electron beams; Multilayers; Physics - Materials Science; Physics - Mesoscale and Nanoscale Physics; Raman spectroscopy; Strain; Substrates; Thin films; Transition metal compounds; Two dimensional materials

We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS\(_{2}\) via the deposition of stressed thin films to encapsulate exfoliated flakes. With this technique we can directly engineer MoS\(_{2}\) strain magnitude by changing d...