Edge states and ballistic transport in zig-zag graphene ribbons: the role of SiC polytypes
Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribb...
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Published in | arXiv.org |
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Main Authors | , , , , , , , , , , |
Format | Paper Journal Article |
Language | English |
Published |
Ithaca
Cornell University Library, arXiv.org
12.03.2019
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Subjects | |
Online Access | Get full text |
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Summary: | Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribbons are diffusive conductors. Detailed photoemmision and microscopy studies show that 6H-SiC sidewalls zig-zag ribbons are metallic with a pair of n-doped edge states associated with asymmetric edge terminations, In contrast, 4H-SiC zig-zag ribbons are strongly bonded to the SiC; severely distorting the ribbon's \(\pi\)-bands. \(\text{H}_2\)-passivation of the 4H ribbons returns them to a metallic state but show no evidence of edge states. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.1903.05185 |