Measurement of the \{220\} lattice-plane spacing of a \(^{28}\)Si crystal

The spacing of the \{220\} lattice planes of a \(^{28}\)Si crystal was measured by combined x-ray and optical interferometry to a \(3.5\times 10^{-9}\) relative accuracy. The result is \(d_{220}=(192014712.67 \pm 0.67)\) am, at 20.0 \(^\circ\)C and 0 Pa. This value is greater by \((1.9464 \pm 0.0067...

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Bibliographic Details
Published inarXiv.org
Main Authors Massa, Enrico, Mana, Giovanni, Kuetgens, Ulrich, Ferroglio, Luca
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 15.10.2010
Subjects
Atomic properties
Crystal lattices
Physics - Atomic Physics
Physics - Optics
Physics - Other Condensed Matter
Quantum mechanics
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Summary:The spacing of the \{220\} lattice planes of a \(^{28}\)Si crystal was measured by combined x-ray and optical interferometry to a \(3.5\times 10^{-9}\) relative accuracy. The result is \(d_{220}=(192014712.67 \pm 0.67)\) am, at 20.0 \(^\circ\)C and 0 Pa. This value is greater by \((1.9464 \pm 0.0067)\times 10^{-9} d_{220}\) than the spacing in natural Si, a difference which confirms quantum mechanics calculations. Subsequently, this crystal has been used to determine the Avogadro constant by counting the Si atoms, a key step towards a realization of the mass unit based on a conventional value of the Planck or the Avogadro constants.
ISSN:2331-8422
DOI:10.48550/arxiv.1010.3088