Self-induced inverse spin Hall effect in permalloy at room temperature

• Published in: arXiv.org
• Main Authors: Tsukahara, Ayaka, Ando, Yuichiro, Kitamura, Yuta, Emito, Hiroyuki, Shikoh, Eiji, Delmo, Michael P, Teruya Shinjo, Shiraishi, Masashi
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 16.06.2014
• Subjects: Charge materials; Electric potential; Electromagnetism; Electromotive forces; Ferromagnetic materials; Ferrous alloys; Hall effect; Magnetic alloys; Magnetism; Magnetoresistance; Magnetoresistivity; Nernst-Ettingshausen effect; Physics - Materials Science; Physics - Mesoscale and Nanoscale Physics; Room temperature; Spin-orbit interactions; Spintronics; Transport phenomena
• DOI: 10.48550/arxiv.1301.3580

Inverse spin Hall effect (ISHE) allows the conversion of pure spin current into charge current in nonmagnetic materials (NM) due to spin-orbit interaction (SOI). In ferromagnetic materials (FM), SOI is known to contribute to anomalous Hall effect (AHE), anisotropic magnetoresistance (AMR), and other spin-dependent transport phenomena. However, SOI in FM has been ignored in ISHE studies in spintronic devices, and the possibility of "self-induced ISHE" in FM has never been explored until now. In this paper, we demonstrate the experimental verification of ISHE in FM. We found that the spin-pumping-induced spin current in permalloy (Py) film generates a transverse electromotive force (EMF) in the film itself, which results from the coupling of spin current and SOI in Py. The control experiments ruled out spin rectification effect and anomalous Nernst effect as the origin of the EMF.