III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers

• Published in: ACS applied materials & interfaces Vol. 16; no. 26; pp. 34294 - 34302
• Main Authors: Pingen, Katrin, Wolff, Niklas, Mohammadian, Zahra, Sandström, Per, Beuer, Susanne, von Hauff, Elizabeth, Kienle, Lorenz, Hultman, Lars, Birch, Jens, Hsiao, Ching-Lien, Hinz, Alexander M.
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 03.07.2024
• Subjects: cost effectiveness; Surfaces, Interfaces, and Applications; transmission electron microscopy; X-ray diffraction; AlN; Al seed layer; GaN; magnetron sputter epitaxy; polarity
• ISSN: 1944-8244; 1944-8252; 1944-8252
• DOI: 10.1021/acsami.4c03112

Group III-nitride semiconductors have been subject of intensive research, resulting in the maturing of the material system and adoption of III-nitrides in modern optoelectronics and power electronic devices. Defined film polarity is an important aspect of III-nitride epitaxy as the polarity affects...