Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering

• Published in: Nano letters Vol. 11; no. 7; pp. 2584 - 2589
• Main Authors: Chen, Lin, Yang, Xiang, Yang, Fuhua, Zhao, Jianhua, Misuraca, Jennifer, Xiong, Peng, von Molnár, Stephan
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 13.07.2011
• Subjects: Annealing; Arsenicals - chemistry; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Curie temperature; Exact sciences and technology; Gallium - chemistry; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Magnetic properties and materials; Magnetic properties of nanostructures; Magnetics; Manganese; Manganese - chemistry; Materials science; Nanoscale materials and structures: fabrication and characterization; Nanostructure; Nanostructures - chemistry; Nanotechnology; Nanowires; Optimization; Physics; Quantum wires; Semiconductors; Small particles and nanoscale materials; Studies of specific magnetic materials; Surface Properties; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Temperature; Wire; molecular-beam epitaxy; magnetotransport phenomena; magnetic properties of nanostructures; Magnetic semiconductors; Curie point; Semiconductor materials; Electrical properties; Ferromagnetic materials; Annealing temperature; Manganese additions; Hall effect; Nanostructures; Gallium additions; Thin films; Nanowires; Magnetoresistance; Thermal annealing; Nanostructured materials

We demonstrate by magneto-transport measurements that a Curie temperature as high as 200 K can be obtained in nanostructures of (Ga,Mn)As. Heavily Mn-doped (Ga,Mn)As films were patterned into nanowires and then subject to low-temperature annealing. Resistance and Hall effect measurements demonstrate...