Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High‑k Dielectrics

• Published in: ACS applied materials & interfaces Vol. 9; no. 5; pp. 4719 - 4724
• Main Authors: Nugraha, Mohamad I, Häusermann, Roger, Watanabe, Shun, Matsui, Hiroyuki, Sytnyk, Mykhailo, Heiss, Wolfgang, Takeya, Jun, Loi, Maria A
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 08.02.2017
• Subjects: dielectrics; polymers; quantitative analysis; quantum dots; high-k; trap states; PbS quantum dots; field-effect transistors; polaron

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close t...