Patterning, Characterization, and Chemical Sensing Applications of Graphene Nanoribbon Arrays Down to 5 nm Using Helium Ion Beam Lithography

• Published in: ACS nano Vol. 8; no. 2; pp. 1538 - 1546
• Main Authors: Abbas, Ahmad N, Liu, Gang, Liu, Bilu, Zhang, Luyao, Liu, He, Ohlberg, Douglas, Wu, Wei, Zhou, Chongwu
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 25.02.2014
• Subjects: Alignment; Arrays; Detection; Electronics; Graphene; Ion beams; Lithography; Nanostructure; Patterning; graphene nanoribbon; field-effect transistor; array; helium ion beam lithography

Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, p...