Patterning, Characterization, and Chemical Sensing Applications of Graphene Nanoribbon Arrays Down to 5 nm Using Helium Ion Beam Lithography
Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, p...
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| Published in | ACS nano Vol. 8; no. 2; pp. 1538 - 1546 |
|---|---|
| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
25.02.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1936-0851 1936-086X 1936-086X |
| DOI | 10.1021/nn405759v |
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| Abstract | Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, problems like GNR alignment, width control, uniformity, high aspect ratios, and edge roughness must be resolved in order to introduce GNRs as a robust alternative technology. Here we report patterning, characterization, and superior chemical sensing of ultranarrow aligned GNR arrays down to 5 nm width using helium ion beam lithography (HIBL) for the first time. The patterned GNR arrays possess narrow and adjustable widths, high aspect ratios, and relatively high quality. Field-effect transistors were fabricated on such GNR arrays and temperature-dependent transport measurements show the thermally activated carrier transport in the GNR array structure. Furthermore, we have demonstrated exceptional NO2 gas sensitivity of the 5 nm GNR array devices down to parts per billion (ppb) levels. The results show the potential of HIBL fabricated GNRs for the electronic and sensing applications. |
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| AbstractList | Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, problems like GNR alignment, width control, uniformity, high aspect ratios, and edge roughness must be resolved in order to introduce GNRs as a robust alternative technology. Here we report patterning, characterization, and superior chemical sensing of ultranarrow aligned GNR arrays down to 5 nm width using helium ion beam lithography (HIBL) for the first time. The patterned GNR arrays possess narrow and adjustable widths, high aspect ratios, and relatively high quality. Field-effect transistors were fabricated on such GNR arrays and temperature-dependent transport measurements show the thermally activated carrier transport in the GNR array structure. Furthermore, we have demonstrated exceptional NO2 gas sensitivity of the 5 nm GNR array devices down to parts per billion (ppb) levels. The results show the potential of HIBL fabricated GNRs for the electronic and sensing applications. Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, problems like GNR alignment, width control, uniformity, high aspect ratios, and edge roughness must be resolved in order to introduce GNRs as a robust alternative technology. Here we report patterning, characterization, and superior chemical sensing of ultranarrow aligned GNR arrays down to 5 nm width using helium ion beam lithography (HIBL) for the first time. The patterned GNR arrays possess narrow and adjustable widths, high aspect ratios, and relatively high quality. Field-effect transistors were fabricated on such GNR arrays and temperature-dependent transport measurements show the thermally activated carrier transport in the GNR array structure. Furthermore, we have demonstrated exceptional NO2 gas sensitivity of the 5 nm GNR array devices down to parts per billion (ppb) levels. The results show the potential of HIBL fabricated GNRs for the electronic and sensing applications.Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, problems like GNR alignment, width control, uniformity, high aspect ratios, and edge roughness must be resolved in order to introduce GNRs as a robust alternative technology. Here we report patterning, characterization, and superior chemical sensing of ultranarrow aligned GNR arrays down to 5 nm width using helium ion beam lithography (HIBL) for the first time. The patterned GNR arrays possess narrow and adjustable widths, high aspect ratios, and relatively high quality. Field-effect transistors were fabricated on such GNR arrays and temperature-dependent transport measurements show the thermally activated carrier transport in the GNR array structure. Furthermore, we have demonstrated exceptional NO2 gas sensitivity of the 5 nm GNR array devices down to parts per billion (ppb) levels. The results show the potential of HIBL fabricated GNRs for the electronic and sensing applications. Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, problems like GNR alignment, width control, uniformity, high aspect ratios, and edge roughness must be resolved in order to introduce GNRs as a robust alternative technology. Here we report patterning, characterization, and superior chemical sensing of ultranarrow aligned GNR arrays down to 5 nm width using helium ion beam lithography (HIBL) for the first time. The patterned GNR arrays possess narrow and adjustable widths, high aspect ratios, and relatively high quality. Field-effect transistors were fabricated on such GNR arrays and temperature-dependent transport measurements show the thermally activated carrier transport in the GNR array structure. Furthermore, we have demonstrated exceptional NO sub(2) gas sensitivity of the 5 nm GNR array devices down to parts per billion (ppb) levels. The results show the potential of HIBL fabricated GNRs for the electronic and sensing applications. |
| Author | Liu, Gang Liu, Bilu Abbas, Ahmad N Liu, He Ohlberg, Douglas Wu, Wei Zhang, Luyao Zhou, Chongwu |
| AuthorAffiliation | University of Southern California Hewlett-Packard Co Department of Electrical Engineering King Abdulaziz University |
| AuthorAffiliation_xml | – name: University of Southern California – name: Hewlett-Packard Co – name: Department of Electrical Engineering – name: King Abdulaziz University |
| Author_xml | – sequence: 1 givenname: Ahmad N surname: Abbas fullname: Abbas, Ahmad N – sequence: 2 givenname: Gang surname: Liu fullname: Liu, Gang – sequence: 3 givenname: Bilu surname: Liu fullname: Liu, Bilu – sequence: 4 givenname: Luyao surname: Zhang fullname: Zhang, Luyao – sequence: 5 givenname: He surname: Liu fullname: Liu, He – sequence: 6 givenname: Douglas surname: Ohlberg fullname: Ohlberg, Douglas – sequence: 7 givenname: Wei surname: Wu fullname: Wu, Wei email: chongwuz@usc.edu, wu.w@usc.edu – sequence: 8 givenname: Chongwu surname: Zhou fullname: Zhou, Chongwu email: chongwuz@usc.edu, wu.w@usc.edu |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/24467172$$D View this record in MEDLINE/PubMed |
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| Snippet | Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs)... |
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| SubjectTerms | Alignment Arrays Detection Electronics Graphene Ion beams Lithography Nanostructure Patterning |
| Title | Patterning, Characterization, and Chemical Sensing Applications of Graphene Nanoribbon Arrays Down to 5 nm Using Helium Ion Beam Lithography |
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