Growth Intermediates for CVD Graphene on Cu(111): Carbon Clusters and Defective Graphene

• Published in: Journal of the American Chemical Society Vol. 135; no. 22; pp. 8409 - 8414
• Main Authors: Niu, Tianchao, Zhou, Miao, Zhang, Jialin, Feng, Yuanping, Chen, Wei
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 05.06.2013
• Subjects: annealing; copper; graphene; methane; scanning tunneling microscopy; temperature; thermal degradation; vapors

Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the most promising methods for graphene production. The realization of the wafer scale production of single crystalline graphene films requires an atomic scale understanding of the growth mechanism and the growth in...