Growth Intermediates for CVD Graphene on Cu(111): Carbon Clusters and Defective Graphene
Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the most promising methods for graphene production. The realization of the wafer scale production of single crystalline graphene films requires an atomic scale understanding of the growth mechanism and the growth in...
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| Published in | Journal of the American Chemical Society Vol. 135; no. 22; pp. 8409 - 8414 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
05.06.2013
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| Subjects | |
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| Abstract | Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the most promising methods for graphene production. The realization of the wafer scale production of single crystalline graphene films requires an atomic scale understanding of the growth mechanism and the growth intermediates of CVD graphene on metal films. Here, we use in situ low-temperature scanning tunneling microscopy (LT-STM) to reveal the graphene growth intermediates at different stages via thermal decomposition of methane on Cu(111). We clearly demonstrate that various carbon clusters, including carbon dimers, carbon rectangles, and ‘zigzag’ and ‘armchair’-like carbon chains, are the actual growth intermediates prior to the graphene formation. Upon the saturation of these carbon clusters, they can transform into defective graphene possessing pseudoperiodic corrugations and vacancies. These vacancy-defects can only be effectively healed in the presence of methane via high temperature annealing at 800 °C and result in the formation of vacancy-free monolayer graphene on Cu(111). |
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| AbstractList | Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the most promising methods for graphene production. The realization of the wafer scale production of single crystalline graphene films requires an atomic scale understanding of the growth mechanism and the growth intermediates of CVD graphene on metal films. Here, we use in situ low-temperature scanning tunneling microscopy (LT-STM) to reveal the graphene growth intermediates at different stages via thermal decomposition of methane on Cu(111). We clearly demonstrate that various carbon clusters, including carbon dimers, carbon rectangles, and 'zigzag' and 'armchair'-like carbon chains, are the actual growth intermediates prior to the graphene formation. Upon the saturation of these carbon clusters, they can transform into defective graphene possessing pseudoperiodic corrugations and vacancies. These vacancy-defects can only be effectively healed in the presence of methane via high temperature annealing at 800 °C and result in the formation of vacancy-free monolayer graphene on Cu(111).Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the most promising methods for graphene production. The realization of the wafer scale production of single crystalline graphene films requires an atomic scale understanding of the growth mechanism and the growth intermediates of CVD graphene on metal films. Here, we use in situ low-temperature scanning tunneling microscopy (LT-STM) to reveal the graphene growth intermediates at different stages via thermal decomposition of methane on Cu(111). We clearly demonstrate that various carbon clusters, including carbon dimers, carbon rectangles, and 'zigzag' and 'armchair'-like carbon chains, are the actual growth intermediates prior to the graphene formation. Upon the saturation of these carbon clusters, they can transform into defective graphene possessing pseudoperiodic corrugations and vacancies. These vacancy-defects can only be effectively healed in the presence of methane via high temperature annealing at 800 °C and result in the formation of vacancy-free monolayer graphene on Cu(111). Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the most promising methods for graphene production. The realization of the wafer scale production of single crystalline graphene films requires an atomic scale understanding of the growth mechanism and the growth intermediates of CVD graphene on metal films. Here, we use in situ low-temperature scanning tunneling microscopy (LT-STM) to reveal the graphene growth intermediates at different stages via thermal decomposition of methane on Cu(111). We clearly demonstrate that various carbon clusters, including carbon dimers, carbon rectangles, and 'zigzag' and 'armchair'-like carbon chains, are the actual growth intermediates prior to the graphene formation. Upon the saturation of these carbon clusters, they can transform into defective graphene possessing pseudoperiodic corrugations and vacancies. These vacancy-defects can only be effectively healed in the presence of methane via high temperature annealing at 800 °C and result in the formation of vacancy-free monolayer graphene on Cu(111). |
| Author | Feng, Yuanping Chen, Wei Niu, Tianchao Zhou, Miao Zhang, Jialin |
| AuthorAffiliation | Department of Chemistry, National University of Singapore Department of Physics, National University of Singapore |
| AuthorAffiliation_xml | – name: Department of Physics, National University of Singapore – name: Department of Chemistry, National University of Singapore |
| Author_xml | – sequence: 1 givenname: Tianchao surname: Niu fullname: Niu, Tianchao – sequence: 2 givenname: Miao surname: Zhou fullname: Zhou, Miao – sequence: 3 givenname: Jialin surname: Zhang fullname: Zhang, Jialin – sequence: 4 givenname: Yuanping surname: Feng fullname: Feng, Yuanping – sequence: 5 givenname: Wei surname: Chen fullname: Chen, Wei email: phycw@nus.edu.sg |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/23675983$$D View this record in MEDLINE/PubMed |
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| Snippet | Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the most promising methods for graphene production. The realization of the... |
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| SubjectTerms | annealing copper graphene methane scanning tunneling microscopy temperature thermal degradation vapors |
| Title | Growth Intermediates for CVD Graphene on Cu(111): Carbon Clusters and Defective Graphene |
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