Raman Characterization of ABA- and ABC-Stacked Trilayer Graphene

• Published in: ACS nano Vol. 5; no. 11; pp. 8760 - 8768
• Main Authors: Cong, Chunxiao, Yu, Ting, Sato, Kentaro, Shang, Jingzhi, Saito, Riichiro, Dresselhaus, Gene F, Dresselhaus, Mildred S
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 22.11.2011
• Subjects: Band theory; Boundaries; Electron-phonon interactions; Graphene; Nanostructure; Softening; Spectra; Stacking; Strain; double resonance Raman spectroscopy; stacking order; Raman scattering; graphene; electron−phonon interaction

Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G′ (2D) band, and the intermediate-frequency combination mode...