Raman Characterization of ABA- and ABC-Stacked Trilayer Graphene
Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G′ (2D) band, and the intermediate-frequency combination mode...
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| Published in | ACS nano Vol. 5; no. 11; pp. 8760 - 8768 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
22.11.2011
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| Subjects | |
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| Abstract | Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G′ (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron–phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G′ mode, respectively. |
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| AbstractList | Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G′ (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron–phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G′ mode, respectively. Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron-phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G' mode, respectively.Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron-phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G' mode, respectively. |
| Author | Cong, Chunxiao Dresselhaus, Mildred S Saito, Riichiro Dresselhaus, Gene F Sato, Kentaro Yu, Ting Shang, Jingzhi |
| AuthorAffiliation | Department of Electrical Engineering and Computer Science National University of Singapore Massachusetts Institute of Technology Nanyang Technological University Tohoku University Francis Bitter Magnet Laboratory Department of Physics |
| AuthorAffiliation_xml | – name: Tohoku University – name: Department of Physics – name: Francis Bitter Magnet Laboratory – name: Department of Electrical Engineering and Computer Science – name: National University of Singapore – name: Massachusetts Institute of Technology – name: Nanyang Technological University |
| Author_xml | – sequence: 1 givenname: Chunxiao surname: Cong fullname: Cong, Chunxiao – sequence: 2 givenname: Ting surname: Yu fullname: Yu, Ting email: yuting@ntu.edu.sg – sequence: 3 givenname: Kentaro surname: Sato fullname: Sato, Kentaro – sequence: 4 givenname: Jingzhi surname: Shang fullname: Shang, Jingzhi – sequence: 5 givenname: Riichiro surname: Saito fullname: Saito, Riichiro – sequence: 6 givenname: Gene F surname: Dresselhaus fullname: Dresselhaus, Gene F – sequence: 7 givenname: Mildred S surname: Dresselhaus fullname: Dresselhaus, Mildred S |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/21962035$$D View this record in MEDLINE/PubMed |
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| Snippet | Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and... |
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| SubjectTerms | Band theory Boundaries Electron-phonon interactions Graphene Nanostructure Softening Spectra Stacking Strain |
| Title | Raman Characterization of ABA- and ABC-Stacked Trilayer Graphene |
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