Highly Narrowband Photomultiplication Type Organic Photodetectors
Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection...
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| Published in | Nano letters Vol. 17; no. 3; pp. 1995 - 2002 |
|---|---|
| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
08.03.2017
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PC71BM (100:1, wt/wt) as active layer without an optical filter. The full width at half-maximum (fwhm) of the PM-type OPDs can be well retained less than 30 nm under different biases. Meanwhile, the champion EQE and rejection ratio approach 53 500% and 2020 at −60 V bias, respectively. The small fwhm should be attributed to the sharp absorption edge of active layer with small amount of PC71BM. The PM phenomenon is attributed to hole tunneling injection from the external circuit assisted by trapped electron in PC71BM near the Al electrode under light illumination. These highly narrowband PM-type OPDs should have great potential applications in sensitively detecting specific wavelength light and be blind to light outside of the desired response window. |
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| AbstractList | Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PC sub(71)BM (100:1, wt/wt) as active layer without an optical filter. The full width at half-maximum (fwhm) of the PM-type OPDs can be well retained less than 30 nm under different biases. Meanwhile, the champion EQE and rejection ratio approach 53 500% and 2020 at -60 V bias, respectively. The small fwhm should be attributed to the sharp absorption edge of active layer with small amount of PC sub(71)BM. The PM phenomenon is attributed to hole tunneling injection from the external circuit assisted by trapped electron in PC sub(71)BM near the Al electrode under light illumination. These highly narrowband PM-type OPDs should have great potential applications in sensitively detecting specific wavelength light and be blind to light outside of the desired response window. Keywords: absorption edge; narrowband response; Organic photodetectors; photogenerated electron distribution; photomultiplication; Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PC71BM (100:1, wt/wt) as active layer without an optical filter. The full width at half-maximum (fwhm) of the PM-type OPDs can be well retained less than 30 nm under different biases. Meanwhile, the champion EQE and rejection ratio approach 53 500% and 2020 at -60 V bias, respectively. The small fwhm should be attributed to the sharp absorption edge of active layer with small amount of PC71BM. The PM phenomenon is attributed to hole tunneling injection from the external circuit assisted by trapped electron in PC71BM near the Al electrode under light illumination. These highly narrowband PM-type OPDs should have great potential applications in sensitively detecting specific wavelength light and be blind to light outside of the desired response window. Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PC BM (100:1, wt/wt) as active layer without an optical filter. The full width at half-maximum (fwhm) of the PM-type OPDs can be well retained less than 30 nm under different biases. Meanwhile, the champion EQE and rejection ratio approach 53 500% and 2020 at -60 V bias, respectively. The small fwhm should be attributed to the sharp absorption edge of active layer with small amount of PC BM. The PM phenomenon is attributed to hole tunneling injection from the external circuit assisted by trapped electron in PC BM near the Al electrode under light illumination. These highly narrowband PM-type OPDs should have great potential applications in sensitively detecting specific wavelength light and be blind to light outside of the desired response window. Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PC71BM (100:1, wt/wt) as active layer without an optical filter. The full width at half-maximum (fwhm) of the PM-type OPDs can be well retained less than 30 nm under different biases. Meanwhile, the champion EQE and rejection ratio approach 53 500% and 2020 at −60 V bias, respectively. The small fwhm should be attributed to the sharp absorption edge of active layer with small amount of PC71BM. The PM phenomenon is attributed to hole tunneling injection from the external circuit assisted by trapped electron in PC71BM near the Al electrode under light illumination. These highly narrowband PM-type OPDs should have great potential applications in sensitively detecting specific wavelength light and be blind to light outside of the desired response window. |
| Author | Zhang, Miao Wang, Yongsheng Hu, Bin Li, Lingliang Fang, Ying Huang, Jinsong Zhang, Fujun Wang, Kai Wang, Wenbin Du, Mingde |
| AuthorAffiliation | University of Tennessee University of Nebraska-Lincoln Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience National Center for Nanoscience and Technology Department of Materials Science and Engineering Key Laboratory of Luminescence and Optical Information, Ministry of Education |
| AuthorAffiliation_xml | – name: University of Tennessee – name: National Center for Nanoscience and Technology – name: University of Nebraska-Lincoln – name: Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience – name: Key Laboratory of Luminescence and Optical Information, Ministry of Education – name: Department of Materials Science and Engineering |
| Author_xml | – sequence: 1 givenname: Wenbin surname: Wang fullname: Wang, Wenbin organization: Key Laboratory of Luminescence and Optical Information, Ministry of Education – sequence: 2 givenname: Fujun orcidid: 0000-0003-2829-0735 surname: Zhang fullname: Zhang, Fujun email: fjzhang@bjtu.edu.cn organization: Key Laboratory of Luminescence and Optical Information, Ministry of Education – sequence: 3 givenname: Mingde surname: Du fullname: Du, Mingde organization: National Center for Nanoscience and Technology – sequence: 4 givenname: Lingliang surname: Li fullname: Li, Lingliang organization: University of Nebraska-Lincoln – sequence: 5 givenname: Miao surname: Zhang fullname: Zhang, Miao organization: Key Laboratory of Luminescence and Optical Information, Ministry of Education – sequence: 6 givenname: Kai surname: Wang fullname: Wang, Kai organization: Key Laboratory of Luminescence and Optical Information, Ministry of Education – sequence: 7 givenname: Yongsheng surname: Wang fullname: Wang, Yongsheng organization: Key Laboratory of Luminescence and Optical Information, Ministry of Education – sequence: 8 givenname: Bin surname: Hu fullname: Hu, Bin organization: University of Tennessee – sequence: 9 givenname: Ying orcidid: 0000-0003-2965-7287 surname: Fang fullname: Fang, Ying email: fangy@nanoctr.cn organization: National Center for Nanoscience and Technology – sequence: 10 givenname: Jinsong orcidid: 0000-0002-0509-8778 surname: Huang fullname: Huang, Jinsong email: jhuang2@unl.edu organization: University of Nebraska-Lincoln |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/28165247$$D View this record in MEDLINE/PubMed |
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| ContentType | Journal Article |
| Copyright | Copyright © 2017 American Chemical Society |
| Copyright_xml | – notice: Copyright © 2017 American Chemical Society |
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| DOI | 10.1021/acs.nanolett.6b05418 |
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| Keywords | photogenerated electron distribution absorption edge Organic photodetectors narrowband response photomultiplication |
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| Title | Highly Narrowband Photomultiplication Type Organic Photodetectors |
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