Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this uniq...

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Published in	Nano letters Vol. 14; no. 5; pp. 2884 - 2889
Main Authors	Fei, Ruixiang, Yang, Li
Format	Journal Article
Language	English
Published	Washington, DC American Chemical Society 14.05.2014
Subjects	Anisotropy Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductance Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Energy gaps (solid state) Exact sciences and technology Mathematical analysis Phosphorus Physics Quantum Hall effect Strain strain anisotropic conductance Black phosphorus effective mass phosphorene Free carrier Energy gap Electronic properties Anisotropy Digital simulation Monolayers Electrical conductance Uniaxial strain Phosphorus Quantum Hall effect Carrier mobility
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Abstract	Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic free-carrier mobility can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain (4–6%), we can rotate the preferred conducting direction by 90°. This will be useful for exploring unusual quantum Hall effects and exotic electronic and mechanical applications based on phosphorene.
AbstractList	Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic free-carrier mobility can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain (4-6%), we can rotate the preferred conducting direction by 90 degree . This will be useful for exploring unusual quantum Hall effects and exotic electronic and mechanical applications based on phosphorene. Keywords: Black phosphorus; phosphorene; strain; anisotropic conductance; effective mass Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic free-carrier mobility can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain (4-6%), we can rotate the preferred conducting direction by 90°. This will be useful for exploring unusual quantum Hall effects and exotic electronic and mechanical applications based on phosphorene. Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic free-carrier mobility can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain (4-6%), we can rotate the preferred conducting direction by 90°. This will be useful for exploring unusual quantum Hall effects and exotic electronic and mechanical applications based on phosphorene.Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic free-carrier mobility can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain (4-6%), we can rotate the preferred conducting direction by 90°. This will be useful for exploring unusual quantum Hall effects and exotic electronic and mechanical applications based on phosphorene.
Author	Yang, Li Fei, Ruixiang
AuthorAffiliation	Washington University in St. Louis Department of Physics
AuthorAffiliation_xml	– name: Washington University in St. Louis – name: Department of Physics
Author_xml	– sequence: 1 givenname: Ruixiang surname: Fei fullname: Fei, Ruixiang – sequence: 2 givenname: Li surname: Yang fullname: Yang, Li email: lyang@physics.wustl.edu
BackLink	http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28510351$$DView record in Pascal Francis https://www.ncbi.nlm.nih.gov/pubmed/24779386$$D View this record in MEDLINE/PubMed
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Snippet	Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications...
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SubjectTerms	Anisotropy Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductance Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Energy gaps (solid state) Exact sciences and technology Mathematical analysis Phosphorus Physics Quantum Hall effect Strain
Title	Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
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