Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography

Since 2002, we have been developing a carbon dioxide (CO2) laser-produced tin (Sn) plasma (LPP) extreme ultraviolet (EUV) light source, which is the most promising solution because of the 13.5 nm wavelength high power (>200 W) light source for high volume manufacturing. EUV lithography is used fo...

Full description

Saved in:
Bibliographic Details
Published inPhysics research international Vol. 2012; no. 2012; pp. 1 - 11
Main Authors Mizoguchi, Hakaru, Yanagida, Tatsuya, Hori, Tsukasa, Fujimoto, Junichi
Format Journal Article
LanguageEnglish
Published Cairo, Egypt Hindawi Puplishing Corporation 01.09.2012
Hindawi Publishing Corporation
Online AccessGet full text

Cover

Loading…