Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography
Since 2002, we have been developing a carbon dioxide (CO2) laser-produced tin (Sn) plasma (LPP) extreme ultraviolet (EUV) light source, which is the most promising solution because of the 13.5 nm wavelength high power (>200 W) light source for high volume manufacturing. EUV lithography is used fo...
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Published in | Physics research international Vol. 2012; no. 2012; pp. 1 - 11 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Cairo, Egypt
Hindawi Puplishing Corporation
01.09.2012
Hindawi Publishing Corporation |
Online Access | Get full text |
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