Strong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers
The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient ge...
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| Published in | Nano letters Vol. 16; no. 12; pp. 7514 - 7520 |
|---|---|
| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
14.12.2016
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin–orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS2 or WSe2)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials. |
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| AbstractList | The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS2 or WSe2)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS2 or WSe2)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials. The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS or WSe )/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials. Not provided. The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin–orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS2 or WSe2)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials. |
| Author | Zheng, Cheng Li, Lain-Jong Yu, Guoqiang Amiri, Pedram Khalili Zhu, Xiaodan Shao, Qiming Lan, Yann-Wen Li, Ming-Yang Wang, Kang L Shi, Yumeng |
| AuthorAffiliation | King Abdullah University of Science and Technology Academia Sinica University of California Physical Science and Engineering Division Shenzhen University Device Research Laboratory, Department of Electrical Engineering SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering Research Center for Applied Sciences |
| AuthorAffiliation_xml | – name: Shenzhen University – name: University of California – name: Academia Sinica – name: Physical Science and Engineering Division – name: Device Research Laboratory, Department of Electrical Engineering – name: King Abdullah University of Science and Technology – name: SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering – name: Research Center for Applied Sciences |
| Author_xml | – sequence: 1 givenname: Qiming orcidid: 0000-0003-2613-3031 surname: Shao fullname: Shao, Qiming email: sqm@ucla.edu – sequence: 2 givenname: Guoqiang orcidid: 0000-0002-7439-6920 surname: Yu fullname: Yu, Guoqiang email: guoqiangyu@ucla.edu – sequence: 3 givenname: Yann-Wen surname: Lan fullname: Lan, Yann-Wen – sequence: 4 givenname: Yumeng surname: Shi fullname: Shi, Yumeng – sequence: 5 givenname: Ming-Yang surname: Li fullname: Li, Ming-Yang – sequence: 6 givenname: Cheng surname: Zheng fullname: Zheng, Cheng – sequence: 7 givenname: Xiaodan surname: Zhu fullname: Zhu, Xiaodan – sequence: 8 givenname: Lain-Jong surname: Li fullname: Li, Lain-Jong – sequence: 9 givenname: Pedram Khalili surname: Amiri fullname: Amiri, Pedram Khalili – sequence: 10 givenname: Kang L surname: Wang fullname: Wang, Kang L email: wang@ee.ucla.edu |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/27960524$$D View this record in MEDLINE/PubMed https://www.osti.gov/biblio/1534768$$D View this record in Osti.gov |
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| Keywords | spintronics charge−spin conversion two-dimensional materials Spin−orbit torque transition metal dichalcogenides Rashba-Edelstein effect |
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| Title | Strong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers |
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