Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films

We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased...

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Published inACS applied materials & interfaces Vol. 8; no. 49; pp. 33916 - 33923
Main Authors Tran Nguyen, Nhat Hong, Nguyen, Truong Huu, Liu, Yi-ren, Aminzare, Masoud, Pham, Anh Tuan Thanh, Cho, Sunglae, Wong, Deniz P, Chen, Kuei-Hsien, Seetawan, Tosawat, Pham, Ngoc Kim, Ta, Hanh Kieu Thi, Tran, Vinh Cao, Phan, Thang Bach
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 14.12.2016
Subjects
crystal structure
electrical conductivity
gallium
indium
thermal conductivity
zinc oxide
Seebeck coefficient
dual doping
thermal conductivity
crystalline IGZO thin film
localized states
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Abstract We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity but improved Seebeck coefficient. The variation of thermoelectric properties is discussed in terms of film crystallinity, which is subject to the dopants’ radius. Small amounts of In dopants with a large radius may introduce localized regions in the host film, affecting the thermoelectric properties. Consequently, a 1.5 times increase in power factor, three times reduction in thermal conductivity, and 5-fold enhancement in the figure of merit ZT have been achieved at 110 °C. The results also indicate that the balanced control of both electron and lattice thermal conductivities through dopant selection are necessary to attain low total thermal conductivity.
AbstractList We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity but improved Seebeck coefficient. The variation of thermoelectric properties is discussed in terms of film crystallinity, which is subject to the dopants' radius. Small amounts of In dopants with a large radius may introduce localized regions in the host film, affecting the thermoelectric properties. Consequently, a 1.5 times increase in power factor, three times reduction in thermal conductivity, and 5-fold enhancement in the figure of merit ZT have been achieved at 110 °C. The results also indicate that the balanced control of both electron and lattice thermal conductivities through dopant selection are necessary to attain low total thermal conductivity.
Author Wong, Deniz P
Pham, Ngoc Kim
Nguyen, Truong Huu
Cho, Sunglae
Chen, Kuei-Hsien
Liu, Yi-ren
Ta, Hanh Kieu Thi
Tran, Vinh Cao
Phan, Thang Bach
Aminzare, Masoud
Seetawan, Tosawat
Tran Nguyen, Nhat Hong
Pham, Anh Tuan Thanh
AuthorAffiliation Center of Excellence on Alternative Energy, Research Development Institute, Program of Physics, Faculty of Science and Technology
Laboratory of Advanced Materials, University of Science
University of Ulsan
Academia Sinica
Faculty of Materials Science, University of Science
Faculty of Applied Science, University of Technology
Institute of Atomic and Molecular Sciences
Department of Physics
AuthorAffiliation_xml – name: Laboratory of Advanced Materials, University of Science
– name: Academia Sinica
– name: Faculty of Materials Science, University of Science
– name: Faculty of Applied Science, University of Technology
– name: University of Ulsan
– name: Department of Physics
– name: Center of Excellence on Alternative Energy, Research Development Institute, Program of Physics, Faculty of Science and Technology
– name: Institute of Atomic and Molecular Sciences
Author_xml – sequence: 1
  givenname: Nhat Hong
  surname: Tran Nguyen
  fullname: Tran Nguyen, Nhat Hong
– sequence: 2
  givenname: Truong Huu
  surname: Nguyen
  fullname: Nguyen, Truong Huu
– sequence: 3
  givenname: Yi-ren
  surname: Liu
  fullname: Liu, Yi-ren
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  surname: Aminzare
  fullname: Aminzare, Masoud
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  surname: Tran
  fullname: Tran, Vinh Cao
– sequence: 13
  givenname: Thang Bach
  surname: Phan
  fullname: Phan, Thang Bach
  email: pbthang@hcmus.edu.vn
BackLink https://www.ncbi.nlm.nih.gov/pubmed/27960402$$D View this record in MEDLINE/PubMed
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dual doping
thermal conductivity
crystalline IGZO thin film
localized states
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Snippet We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO...
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SubjectTerms crystal structure
electrical conductivity
gallium
indium
thermal conductivity
zinc oxide
Title Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films
URI http://dx.doi.org/10.1021/acsami.6b10591
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