Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum

• Published in: Analytical chemistry (Washington) Vol. 91; no. 9; pp. 5953 - 5960
• Main Authors: Tai, Tse-Yu, Sinha, Anirban, Sarangadharan, Indu, Pulikkathodi, Anil Kumar, Wang, Shin-Li, Lee, Geng-Yen, Chyi, Jen-Inn, Shiesh, Shu-Chu, Lee, Gwo-Bin, Wang, Yu-Lin
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 07.05.2019
• Subjects: Aluminum gallium nitrides; Analytical chemistry; Aptamers; Biomarkers; Biosensors; blood serum; Chemistry; Congestive heart failure; diagnostic techniques; Electric double layer; electric potential difference; electrodes; Field effect transistors; heart failure; High electron mobility transistors; humans; Immunoassay; immunoassays; Ionic strength; Marine environment; Mobility; oligonucleotides; Physiological effects; Proteins; screening; Selectivity; Semiconductor devices; Sensitivity enhancement; transistors

We have developed a swift and simplistic protein immunoassay using aptamer functionalized AlGaN/GaN high electron mobility transistors (HEMTs). The unique design of the sensor facilitates protein detection in a physiological salt environment overcoming charge screening effects, without requiring sam...