Hysteresis of Electronic Transport in Graphene Transistors

• Published in: ACS nano Vol. 4; no. 12; pp. 7221 - 7228
• Main Authors: Wang, Haomin, Wu, Yihong, Cong, Chunxiao, Shang, Jingzhi, Yu, Ting
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 28.12.2010
• Subjects: conductance hysteresis; graphene transistor; water dipole; charge transfer; capacitive gating

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical character...