Hysteresis of Electronic Transport in Graphene Transistors
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical character...
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| Published in | ACS nano Vol. 4; no. 12; pp. 7221 - 7228 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
28.12.2010
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-heating in a helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has a much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection, and chemically driven applications. |
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| AbstractList | Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-heating in a helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has a much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection, and chemically driven applications. Graphene field effect transistors commonly comprise graphene flakes lying on SiO(2) surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-heating in a helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has a much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection, and chemically driven applications. Graphene field effect transistors commonly comprise graphene flakes lying on SiO(2) surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-heating in a helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has a much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection, and chemically driven applications.Graphene field effect transistors commonly comprise graphene flakes lying on SiO(2) surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-heating in a helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has a much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection, and chemically driven applications. |
| Author | Wang, Haomin Cong, Chunxiao Wu, Yihong Shang, Jingzhi Yu, Ting |
| Author_xml | – sequence: 1 givenname: Haomin surname: Wang fullname: Wang, Haomin email: haomin.wang@gmail.com, yuting@ntu.edu.sg – sequence: 2 givenname: Yihong surname: Wu fullname: Wu, Yihong – sequence: 3 givenname: Chunxiao surname: Cong fullname: Cong, Chunxiao – sequence: 4 givenname: Jingzhi surname: Shang fullname: Shang, Jingzhi – sequence: 5 givenname: Ting surname: Yu fullname: Yu, Ting email: haomin.wang@gmail.com, yuting@ntu.edu.sg |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/21047068$$D View this record in MEDLINE/PubMed |
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| Cites_doi | 10.1063/1.1516633 10.1038/nmat1967 10.1103/PhysRevLett.101.146805 10.1021/nl025584c 10.1063/1.3119215 10.1103/RevModPhys.54.437 10.1103/PhysRevLett.97.266405 10.1063/1.2840713 10.1038/nature05545 10.1038/nphys781 10.1103/PhysRevLett.101.136804 10.1063/1.2898501 10.1063/1.3334730 10.1073/pnas.0704772104 10.1063/1.3263942 10.1063/1.2789673 10.1063/1.3291110 10.1021/nl900203n 10.1038/nmat1849 10.1021/nl801412y 10.1021/nl0259232 10.1103/PhysRevB.79.235440 10.1021/nl8033637 10.1021/nl025577o 10.1098/rsta.2007.2157 10.1103/PhysRevB.80.241412 10.1021/nl903162a 10.1021/nl803214a 10.1038/nature07094 10.1063/1.3460798 10.1103/PhysRevB.77.195409 10.1103/PhysRevLett.98.166802 10.1021/nl900725u 10.1126/science.1171245 10.1021/nl8010337 10.1103/PhysRevB.75.235433 10.1126/science.1102896 10.1103/PhysRevLett.99.246803 10.1063/1.3380616 10.1103/RevModPhys.81.109 10.1063/1.3273396 10.1103/PhysRevB.77.125416 |
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| References | Wang H. M. (ref26/cit26) 2010; 96 Kim W. (ref38/cit38) 2003; 3 Katsnelson M. I. (ref8/cit8) 2008; 366 Martin J. (ref4/cit4) 2008; 4 Farmer D. B. (ref16/cit16) 2009; 9 Geringer V. (ref18/cit18) 2010; 96 ref27/cit27 Yoo J. S. (ref44/cit44) 2010; 96 Cho S. (ref7/cit7) 2008; 77 Meyer J. C. (ref34/cit34) 2007; 446 Yan J. (ref30/cit30) 2008; 101 Yan J. (ref29/cit29) 2007; 98 Leenaerts O. (ref45/cit45) 2008; 77 Sabri S. S. (ref19/cit19) 2009; 95 Lafkioti M. (ref20/cit20) 2010; 10 Sadowski M. L. (ref32/cit32) 2006; 97 ref39/cit39 Sabio J. (ref11/cit11) 2008; 77 Wang H. M. (ref25/cit25) 2008; 92 Liao Z. (ref21/cit21) 2010; 133 Meyer J. C. (ref9/cit9) 2008; 454 Castro Neto A. H. (ref3/cit3) 2009; 81 Lohmann T. (ref13/cit13) 2009; 9 Moser J. (ref33/cit33) 2007; 91 Li X. (ref47/cit47) 2009; 324 Novoselove K. S. (ref1/cit1) 2004; 306 ref40/cit40 Schedin F. (ref12/cit12) 2007; 6 Radosavljevi M. (ref37/cit37) 2002; 2 Jang C. (ref24/cit24) 2008; 101 Booth T. J. (ref10/cit10) 2008; 8 Guinea F. (ref31/cit31) 2007; 75 Moser J. (ref41/cit41) 2008; 92 Chen F. (ref23/cit23) 2009; 9 Tan Y. W. (ref6/cit6) 2007; 99 Cui J. B. (ref35/cit35) 2002; 81 Fuhrer M. S. (ref36/cit36) 2002; 2 Leenaerts O. (ref46/cit46) 2009; 79 Dan Y. (ref15/cit15) 2009; 9 Kim K. (ref17/cit17) 2008; 8 Zheng Y. (ref43/cit43) 2009; 94 Ando T. (ref28/cit28) 1982; 54 Zhang L. (ref42/cit42) 2009; 80 Adam S. (ref5/cit5) 2007; 104 Geim A. K. (ref2/cit2) 2007; 6 Joshi P. (ref22/cit22) 2010; 22 Unarunotai S. (ref14/cit14) 2009; 95 |
| References_xml | – volume: 81 start-page: 3260 year: 2002 ident: ref35/cit35 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1516633 – volume: 6 start-page: 652 year: 2007 ident: ref12/cit12 publication-title: Nat. Mater. doi: 10.1038/nmat1967 – volume: 101 start-page: 146805 year: 2008 ident: ref24/cit24 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.101.146805 – volume: 2 start-page: 761 year: 2002 ident: ref37/cit37 publication-title: Nano Lett. doi: 10.1021/nl025584c – volume: 94 start-page: 163505 year: 2009 ident: ref43/cit43 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3119215 – volume: 54 start-page: 437 year: 1982 ident: ref28/cit28 publication-title: Rev. Mod. Phys. doi: 10.1103/RevModPhys.54.437 – volume: 97 start-page: 266405 year: 2006 ident: ref32/cit32 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.97.266405 – volume: 92 start-page: 053504 year: 2008 ident: ref25/cit25 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2840713 – volume: 446 start-page: 60 year: 2007 ident: ref34/cit34 publication-title: Nature doi: 10.1038/nature05545 – volume: 4 start-page: 144 year: 2008 ident: ref4/cit4 publication-title: Nat. Phys. doi: 10.1038/nphys781 – volume: 101 start-page: 136804 year: 2008 ident: ref30/cit30 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.101.136804 – volume: 92 start-page: 123507 year: 2008 ident: ref41/cit41 publication-title: App. Phys. Letts. doi: 10.1063/1.2898501 – volume: 96 start-page: 082114 year: 2010 ident: ref18/cit18 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3334730 – volume: 104 start-page: 18392 year: 2007 ident: ref5/cit5 publication-title: Proc. Natl. Acad. Sci. U.S.A. doi: 10.1073/pnas.0704772104 – volume: 95 start-page: 202101 year: 2009 ident: ref14/cit14 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3263942 – volume: 91 start-page: 163513 year: 2007 ident: ref33/cit33 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2789673 – volume: 77 start-page: 084102(R) year: 2008 ident: ref7/cit7 publication-title: Phys. Rev. B – volume: 96 start-page: 023106 year: 2010 ident: ref26/cit26 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3291110 – volume: 9 start-page: 1973 year: 2009 ident: ref13/cit13 publication-title: Nano Lett. doi: 10.1021/nl900203n – volume: 6 start-page: 183 year: 2007 ident: ref2/cit2 publication-title: Nat. Mater. doi: 10.1038/nmat1849 – volume: 8 start-page: 2442 year: 2008 ident: ref10/cit10 publication-title: Nano Lett. doi: 10.1021/nl801412y – volume: 3 start-page: 193 year: 2003 ident: ref38/cit38 publication-title: Nano Lett. doi: 10.1021/nl0259232 – volume: 79 start-page: 235440 year: 2009 ident: ref46/cit46 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.79.235440 – volume: 9 start-page: 1472 year: 2009 ident: ref15/cit15 publication-title: Nano Lett. doi: 10.1021/nl8033637 – volume: 2 start-page: 755 year: 2002 ident: ref36/cit36 publication-title: Nano Lett. doi: 10.1021/nl025577o – volume: 366 start-page: 195 year: 2008 ident: ref8/cit8 publication-title: Phil. Trans. R. Soc. A doi: 10.1098/rsta.2007.2157 – ident: ref40/cit40 – volume: 80 start-page: 241412(R) year: 2009 ident: ref42/cit42 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.80.241412 – volume: 10 start-page: 1149 year: 2010 ident: ref20/cit20 publication-title: Nano Lett. doi: 10.1021/nl903162a – ident: ref39/cit39 – volume: 9 start-page: 388 year: 2009 ident: ref16/cit16 publication-title: Nano Lett. doi: 10.1021/nl803214a – volume: 22 start-page: 334214 year: 2010 ident: ref22/cit22 publication-title: J. Phys.: Condens. Matter – volume: 454 start-page: 319 year: 2008 ident: ref9/cit9 publication-title: Nature doi: 10.1038/nature07094 – volume: 133 start-page: 044703 year: 2010 ident: ref21/cit21 publication-title: J. Chem. Phys. doi: 10.1063/1.3460798 – volume: 77 start-page: 195409 year: 2008 ident: ref11/cit11 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.77.195409 – ident: ref27/cit27 – volume: 98 start-page: 166802 year: 2007 ident: ref29/cit29 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.98.166802 – volume: 9 start-page: 2571 year: 2009 ident: ref23/cit23 publication-title: Nano Lett. doi: 10.1021/nl900725u – volume: 324 start-page: 1312 year: 2009 ident: ref47/cit47 publication-title: Science doi: 10.1126/science.1171245 – volume: 8 start-page: 3092 year: 2008 ident: ref17/cit17 publication-title: Nano Lett. doi: 10.1021/nl8010337 – volume: 75 start-page: 235433 year: 2007 ident: ref31/cit31 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.75.235433 – volume: 306 start-page: 666 year: 2004 ident: ref1/cit1 publication-title: Science doi: 10.1126/science.1102896 – volume: 99 start-page: 246803 year: 2007 ident: ref6/cit6 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.99.246803 – volume: 96 start-page: 143112 year: 2010 ident: ref44/cit44 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3380616 – volume: 81 start-page: 109 year: 2009 ident: ref3/cit3 publication-title: Rev. Mod. Phys. doi: 10.1103/RevModPhys.81.109 – volume: 95 start-page: 242104 year: 2009 ident: ref19/cit19 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3273396 – volume: 77 start-page: 125416 year: 2008 ident: ref45/cit45 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.77.125416 |
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| Snippet | Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending... Graphene field effect transistors commonly comprise graphene flakes lying on SiO(2) surfaces. The gate-voltage dependent conductance shows hysteresis depending... |
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| Title | Hysteresis of Electronic Transport in Graphene Transistors |
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