Fabrication and Device Characterization of Omega-Shaped-Gate ZnO Nanowire Field-Effect Transistors

• Published in: Nano letters Vol. 6; no. 7; pp. 1454 - 1458
• Main Authors: Keem, Kihyun, Jeong, Dong-Young, Kim, Sangsig, Lee, Moon-Sook, Yeo, In-Seok, Chung, U-In, Moon, Joo-Tae
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 01.07.2006
• Subjects: Aluminum Oxide - chemistry; Cross-disciplinary physics: materials science; rheology; Equipment Design; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Methods of nanofabrication; Microscopy, Scanning Tunneling; Nanoscale materials and structures: fabrication and characterization; Nanostructures; Other topics in nanoscale materials and structures; Physics; Quantum wires; Surface Properties; Transistors, Electronic; Zinc Oxide - chemistry; Atomic layer method; Field effect transistors; Digital simulation; Crystal growth from vapors; Nanowires; Nanostructured materials; Gates; Transconductance; Nanomaterial synthesis

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have attracted a great deal of attention recently, because theoretical simulations predicted that they should have a higher device performance than nanowire-based FETs with other gate geometries. OSG FETs with channels composed o...