Vertically Aligned Nanowires from Boron-Doped Diamond

• Published in: Nano letters Vol. 8; no. 11; pp. 3572 - 3576
• Main Authors: Yang, Nianjun, Uetsuka, Hiroshi, Osawa, Eiji, Nebel, Christoph E
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 01.11.2008
• Subjects: Boron - chemistry; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Diamond - chemistry; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals; Exact sciences and technology; General equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Materials science; Microscopy, Atomic Force; Microscopy, Scanning Tunneling; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanowires - chemistry; Nanowires - ultrastructure; Physics; Quantum wires; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Surface Properties; Chemical sensors; Atomic force microscopy; Electrochemical method; Synthetic diamond; Chemical stability; Doped materials; Surface structure; Polycrystalline diamond; Scanning tunneling microscopy; Reactive ion etching; Electrochemical properties; Electronic structure; Functionalization; Organic molecule; Plasma etching; Surface properties; Boron additions; Nanowires; Biosensors; Bonding; Nanostructured materials

Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of...