Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the const...

Full description

Saved in:
Bibliographic Details
Published inNano letters Vol. 22; no. 18; pp. 7690 - 7698
Main Authors Liu, Xiwen, Ting, John, He, Yunfei, Fiagbenu, Merrilyn Mercy Adzo, Zheng, Jeffrey, Wang, Dixiong, Frost, Jonathan, Musavigharavi, Pariasadat, Esteves, Giovanni, Kisslinger, Kim, Anantharaman, Surendra B., Stach, Eric A., Olsson, Roy H., Jariwala, Deep
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 28.09.2022
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations. Here, we present a transistor-free CIM architecture that permits storage, search, and neural network operations on sub-50 nm thick Aluminum Scandium Nitride ferroelectric diodes (FeDs). Our circuit designs and devices can be directly integrated on top of Silicon microprocessors in a scalable process. By leveraging the field-programmability, nonvolatility, and nonlinearity of FeDs, search operations are demonstrated with a cell footprint <0.12 μm2 when projected onto 45 nm node technology. We further demonstrate neural network operations with 4-bit operation using FeDs. Our results highlight FeDs as candidates for efficient and multifunctional CIM platforms.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Materials Research Science and Engineering Center (MRSEC)
SAND2022-12356J; BNL-223705-2022-JAAM
USDOE Office of Science (SC), Basic Energy Sciences (BES)
National Science Foundation (NSF)
NA0003525; SC0012704; HR00112090047; NNCI-1542153; DMR-1720530
Defense Advanced Research Projects Agency (DARPA)
USDOE National Nuclear Security Administration (NNSA)
ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/acs.nanolett.2c03169