Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the const...
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Published in | Nano letters Vol. 22; no. 18; pp. 7690 - 7698 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Chemical Society
28.09.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations. Here, we present a transistor-free CIM architecture that permits storage, search, and neural network operations on sub-50 nm thick Aluminum Scandium Nitride ferroelectric diodes (FeDs). Our circuit designs and devices can be directly integrated on top of Silicon microprocessors in a scalable process. By leveraging the field-programmability, nonvolatility, and nonlinearity of FeDs, search operations are demonstrated with a cell footprint <0.12 μm2 when projected onto 45 nm node technology. We further demonstrate neural network operations with 4-bit operation using FeDs. Our results highlight FeDs as candidates for efficient and multifunctional CIM platforms. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 Materials Research Science and Engineering Center (MRSEC) SAND2022-12356J; BNL-223705-2022-JAAM USDOE Office of Science (SC), Basic Energy Sciences (BES) National Science Foundation (NSF) NA0003525; SC0012704; HR00112090047; NNCI-1542153; DMR-1720530 Defense Advanced Research Projects Agency (DARPA) USDOE National Nuclear Security Administration (NNSA) |
ISSN: | 1530-6984 1530-6992 1530-6992 |
DOI: | 10.1021/acs.nanolett.2c03169 |