Dephasing Mechanisms of Topologically Protected 2D Surface Carriers in Sputtered SnTe Thin Films

Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge carriers. The outstanding electronic properties of the 2D carriers are often obscured in experiments due to their relatively low number. We...

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Published inNano letters Vol. 25; no. 31; pp. 11811 - 11818
Main Authors Beryani Nezafat, Negin, Bhattacharya, Ahana, Izadi, Sepideh, Ennen, Inga, Wortmann, Martin, Schnatmann, Lauritz, Solaymani, Shahram, Kulesza, Sławomir, Bramowicz, Miroslaw, Westphal, Michael, Biedinger, Jan, Rott, Karsten, Dittler, Michael, Hütten, Andreas, Reiss, Günter, Mittendorff, Martin, Schierning, Gabi
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 06.08.2025
Subjects
Letter
Thin films
Topological insulator
Electron−electron interaction
Weak antilocalization
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Abstract Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge carriers. The outstanding electronic properties of the 2D carriers are often obscured in experiments due to their relatively low number. We address this by using nanocrystalline sputtered SnTe thin films deposited at room temperature, which increase the proportion of 2D carriers. Here, we correlate the structural and electronic parameters and investigate the dephasing mechanisms of these 2D electrons. The dephasing mechanisms vary from quasi-1D electron–electron interactions in the thinnest film studied to 2D electron–electron interactions and finally to electron–phonon interactions in thicker films. Using THz time domain spectroscopy, we measured the scattering rates of the 2D charge carriers and found excellent agreement with the Hikami-Larkin-Nagaoka (HLN) model.
AbstractList Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge carriers. The outstanding electronic properties of the 2D carriers are often obscured in experiments due to their relatively low number. We address this by using nanocrystalline sputtered SnTe thin films deposited at room temperature, which increase the proportion of 2D carriers. Here, we correlate the structural and electronic parameters and investigate the dephasing mechanisms of these 2D electrons. The dephasing mechanisms vary from quasi-1D electron-electron interactions in the thinnest film studied to 2D electron-electron interactions and finally to electron-phonon interactions in thicker films. Using THz time domain spectroscopy, we measured the scattering rates of the 2D charge carriers and found excellent agreement with the Hikami-Larkin-Nagaoka (HLN) model.
Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge carriers. The outstanding electronic properties of the 2D carriers are often obscured in experiments due to their relatively low number. We address this by using nanocrystalline sputtered SnTe thin films deposited at room temperature, which increase the proportion of 2D carriers. Here, we correlate the structural and electronic parameters and investigate the dephasing mechanisms of these 2D electrons. The dephasing mechanisms vary from quasi-1D electron-electron interactions in the thinnest film studied to 2D electron-electron interactions and finally to electron-phonon interactions in thicker films. Using THz time domain spectroscopy, we measured the scattering rates of the 2D charge carriers and found excellent agreement with the Hikami-Larkin-Nagaoka (HLN) model.Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge carriers. The outstanding electronic properties of the 2D carriers are often obscured in experiments due to their relatively low number. We address this by using nanocrystalline sputtered SnTe thin films deposited at room temperature, which increase the proportion of 2D carriers. Here, we correlate the structural and electronic parameters and investigate the dephasing mechanisms of these 2D electrons. The dephasing mechanisms vary from quasi-1D electron-electron interactions in the thinnest film studied to 2D electron-electron interactions and finally to electron-phonon interactions in thicker films. Using THz time domain spectroscopy, we measured the scattering rates of the 2D charge carriers and found excellent agreement with the Hikami-Larkin-Nagaoka (HLN) model.
Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge carriers. The outstanding electronic properties of the 2D carriers are often obscured in experiments due to their relatively low number. We address this by using nanocrystalline sputtered SnTe thin films deposited at room temperature, which increase the proportion of 2D carriers. Here, we correlate the structural and electronic parameters and investigate the dephasing mechanisms of these 2D electrons. The dephasing mechanisms vary from quasi-1D electron–electron interactions in the thinnest film studied to 2D electron–electron interactions and finally to electron–phonon interactions in thicker films. Using THz time domain spectroscopy, we measured the scattering rates of the 2D charge carriers and found excellent agreement with the Hikami-Larkin-Nagaoka (HLN) model.
Author Schierning, Gabi
Izadi, Sepideh
Dittler, Michael
Biedinger, Jan
Reiss, Günter
Hütten, Andreas
Bramowicz, Miroslaw
Kulesza, Sławomir
Westphal, Michael
Rott, Karsten
Mittendorff, Martin
Solaymani, Shahram
Ennen, Inga
Schnatmann, Lauritz
Wortmann, Martin
Beryani Nezafat, Negin
Bhattacharya, Ahana
AuthorAffiliation University of Warmia and Mazury in Olsztyn
Quantum Technologies Research Center (QTRC), SR.C
University of Duisburg-Essen
Faculty of Technical Sciences
Islamic Azad University
Institute for Energy and Materials Processes Applied Quantum Materials
Center for Nanointegration Duisburg-Essen (CENIDE) and Nano Energie Technik Zentrum (NETZ)
Research Center Future Energy Materials and Systems, Research Alliance Ruhr
Department of Physics
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Keywords Thin films
Topological insulator
Electron−electron interaction
Weak antilocalization
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Snippet Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge...
Tin telluride (SnTe), a topological crystalline insulator, features two-dimensional (2D) surface charge carriers with topological protection and 3D bulk charge...
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SubjectTerms Letter
Title Dephasing Mechanisms of Topologically Protected 2D Surface Carriers in Sputtered SnTe Thin Films
URI http://dx.doi.org/10.1021/acs.nanolett.5c01902
https://www.ncbi.nlm.nih.gov/pubmed/40713027
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