High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films

Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor...

Full description

Saved in:
Bibliographic Details
Published inACS nano Vol. 11; no. 4; pp. 4124 - 4132
Main Authors Yang, Yingjun, Ding, Li, Han, Jie, Zhang, Zhiyong, Peng, Lian-Mao
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 25.04.2017
Subjects
Online AccessGet full text

Cover

Loading…