Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low‑k Fluoropolymer Passivation

• Published in: ACS applied materials & interfaces Vol. 9; no. 31; pp. 26161 - 26168
• Main Authors: Choi, Seungbeom, Jo, Jeong-Wan, Kim, Jaeyoung, Song, Seungho, Kim, Jaekyun, Park, Sung Kyu, Kim, Yong-Hoon
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 09.08.2017
• Subjects: liquid-contact-electrification; water stability; solution process; thin-film transistors; fluoropolymer passivation; indium−gallium−zinc oxide

Here, we report static and dynamic water motion-induced instability in indium–gallium–zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (ε ∼ 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrificat...