Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films

The local atomic structure and nanoscale chemistry of ferroelectric aluminum scandium nitride thin films (Al1–x Sc x N) are examined using advanced transmission electron microscopy (TEM) techniques. An Al1–x Sc x N (x = 0.36) film of ∼20 nm thickness was grown on a Pt(111)/Ti/SiO2/Si­(100) substrate...

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Published inJournal of physical chemistry. C Vol. 125; no. 26; pp. 14394 - 14400
Main Authors Musavigharavi, Pariasadat, Meng, Andrew C, Wang, Dixiong, Zheng, Jeffery, Foucher, Alexandre C, Olsson, Roy H, Stach, Eric A
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 08.07.2021
Subjects
aluminum
C: Physical Properties of Materials and Interfaces
chemical composition
Chemistry
crystal structure
films (materials)
Materials Science
nitrides
scandium
Science & Technology - Other Topics
transmission electron microscopy
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Abstract The local atomic structure and nanoscale chemistry of ferroelectric aluminum scandium nitride thin films (Al1–x Sc x N) are examined using advanced transmission electron microscopy (TEM) techniques. An Al1–x Sc x N (x = 0.36) film of ∼20 nm thickness was grown on a Pt(111)/Ti/SiO2/Si­(100) substrate via pulsed DC co-sputtering. Here, we describe how the Sc alloying concentration and strain distribution through the AlScN film thickness become more pronounced in ultrathin films. The homogeneous distribution of scandium and the formation of defects in the epitaxial growth of 2.1% lattice-mismatched AlScN on Pt are reported. In this paper, the “four-dimensional scanning TEM” (4D-STEM) technique is employed to systematically investigate the nanoscale order by measuring the average spacing between atoms within certain regions in the film and determining the strain. The strain map confirms a significant increase in the out-of-plane component of the lattice parameter (∼9%) at the AlScN/Pt interface. The lattice parameter in the Pt template decreases as a function of distance from the Pt/Si interface. The study of the atomic crystal structure and the chemical composition of the AlScN thin film provides useful understanding toward the applications of this material in ferroelectric memories and microelectromechanical systems.
AbstractList The local atomic structure and nanoscale chemistry of ferroelectric aluminum scandium nitride thin films (Al₁–ₓScₓN) are examined using advanced transmission electron microscopy (TEM) techniques. An Al₁–ₓScₓN (x = 0.36) film of ∼20 nm thickness was grown on a Pt(111)/Ti/SiO₂/Si(100) substrate via pulsed DC co-sputtering. Here, we describe how the Sc alloying concentration and strain distribution through the AlScN film thickness become more pronounced in ultrathin films. The homogeneous distribution of scandium and the formation of defects in the epitaxial growth of 2.1% lattice-mismatched AlScN on Pt are reported. In this paper, the “four-dimensional scanning TEM” (4D-STEM) technique is employed to systematically investigate the nanoscale order by measuring the average spacing between atoms within certain regions in the film and determining the strain. The strain map confirms a significant increase in the out-of-plane component of the lattice parameter (∼9%) at the AlScN/Pt interface. The lattice parameter in the Pt template decreases as a function of distance from the Pt/Si interface. The study of the atomic crystal structure and the chemical composition of the AlScN thin film provides useful understanding toward the applications of this material in ferroelectric memories and microelectromechanical systems.
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The local atomic structure and nanoscale chemistry of ferroelectric aluminum scandium nitride thin films (Al1–x Sc x N) are examined using advanced transmission electron microscopy (TEM) techniques. An Al1–x Sc x N (x = 0.36) film of ∼20 nm thickness was grown on a Pt(111)/Ti/SiO2/Si­(100) substrate via pulsed DC co-sputtering. Here, we describe how the Sc alloying concentration and strain distribution through the AlScN film thickness become more pronounced in ultrathin films. The homogeneous distribution of scandium and the formation of defects in the epitaxial growth of 2.1% lattice-mismatched AlScN on Pt are reported. In this paper, the “four-dimensional scanning TEM” (4D-STEM) technique is employed to systematically investigate the nanoscale order by measuring the average spacing between atoms within certain regions in the film and determining the strain. The strain map confirms a significant increase in the out-of-plane component of the lattice parameter (∼9%) at the AlScN/Pt interface. The lattice parameter in the Pt template decreases as a function of distance from the Pt/Si interface. The study of the atomic crystal structure and the chemical composition of the AlScN thin film provides useful understanding toward the applications of this material in ferroelectric memories and microelectromechanical systems.
Author Musavigharavi, Pariasadat
Meng, Andrew C
Stach, Eric A
Olsson, Roy H
Wang, Dixiong
Zheng, Jeffery
Foucher, Alexandre C
AuthorAffiliation Department of Materials Science and Engineering
Department of Electrical and Systems Engineering
Laboratory for Research on the Structure of Matter
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Cites_doi 10.1002/adma.200802611
10.1016/j.ijsolstr.2006.07.006
10.1002/pssr.202000575
10.1063/1.2336999
10.1109/JMEMS.2020.3014584
10.1063/1.4788728
10.1038/ncomms5402
10.1109/IFCS-ISAF41089.2020.9234939
10.1021/acs.nanolett.0c05051
10.1002/pssa.201800569
10.1002/pssa.201700559
10.1016/j.surfcoat.2016.11.083
10.1017/CBO9780511754715
10.1063/1.4953856
10.1063/1.5084945
10.1023/B:JECR.0000033998.72845.51
10.1017/S1431927619000497
10.1016/j.sna.2010.04.011
10.1109/LED.2020.3034576
10.1016/j.vacuum.2011.03.026
10.1016/0001-6160(53)90054-6
10.1063/1.5094611
10.1017/s1431927613007368
10.1038/s41563-019-0387-3
10.1021/acsomega.9b01912
10.1111/j.1151-2916.1994.tb05358.x
10.1063/5.0015281
10.1038/srep03945
10.1002/9783527808465.EMC2016.6335
10.1016/j.tsf.2007.03.007
10.1063/1.4993908
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References ref9/cit9
ref6/cit6
ref3/cit3
ref27/cit27
ref18/cit18
ref11/cit11
ref25/cit25
ref16/cit16
ref32/cit32
ref14/cit14
ref8/cit8
ref5/cit5
ref31/cit31
ref2/cit2
ref28/cit28
ref20/cit20
Williams D. B. (ref23/cit23) 1994; 43
ref17/cit17
ref10/cit10
ref26/cit26
ref19/cit19
ref21/cit21
ref12/cit12
ref15/cit15
ref22/cit22
ref13/cit13
ref4/cit4
ref30/cit30
ref1/cit1
ref24/cit24
Freund L. B. (ref29/cit29) 2004
ref7/cit7
References_xml – ident: ref14/cit14
  doi: 10.1002/adma.200802611
– ident: ref30/cit30
  doi: 10.1016/j.ijsolstr.2006.07.006
– ident: ref10/cit10
  doi: 10.1002/pssr.202000575
– ident: ref1/cit1
  doi: 10.1063/1.2336999
– ident: ref9/cit9
  doi: 10.1109/JMEMS.2020.3014584
– ident: ref5/cit5
  doi: 10.1063/1.4788728
– ident: ref31/cit31
  doi: 10.1038/ncomms5402
– ident: ref21/cit21
  doi: 10.1109/IFCS-ISAF41089.2020.9234939
– ident: ref8/cit8
  doi: 10.1021/acs.nanolett.0c05051
– ident: ref18/cit18
  doi: 10.1002/pssa.201800569
– ident: ref12/cit12
  doi: 10.1002/pssa.201700559
– ident: ref20/cit20
  doi: 10.1016/j.surfcoat.2016.11.083
– volume-title: Thin Film Materials: Stress, Defect Formation and Surface Evolution
  year: 2004
  ident: ref29/cit29
  doi: 10.1017/CBO9780511754715
– ident: ref28/cit28
  doi: 10.1063/1.4953856
– ident: ref6/cit6
  doi: 10.1063/1.5084945
– ident: ref2/cit2
  doi: 10.1023/B:JECR.0000033998.72845.51
– ident: ref16/cit16
  doi: 10.1017/S1431927619000497
– ident: ref3/cit3
  doi: 10.1016/j.sna.2010.04.011
– ident: ref11/cit11
  doi: 10.1109/LED.2020.3034576
– ident: ref4/cit4
  doi: 10.1016/j.vacuum.2011.03.026
– ident: ref32/cit32
  doi: 10.1016/0001-6160(53)90054-6
– volume: 43
  volume-title: Transmission Electron Microscopy
  year: 1994
  ident: ref23/cit23
– ident: ref19/cit19
  doi: 10.1063/1.5094611
– ident: ref25/cit25
  doi: 10.1017/s1431927613007368
– ident: ref17/cit17
  doi: 10.1038/s41563-019-0387-3
– ident: ref13/cit13
  doi: 10.1021/acsomega.9b01912
– ident: ref22/cit22
  doi: 10.1111/j.1151-2916.1994.tb05358.x
– ident: ref7/cit7
  doi: 10.1063/5.0015281
– ident: ref26/cit26
  doi: 10.1038/srep03945
– ident: ref24/cit24
  doi: 10.1002/9783527808465.EMC2016.6335
– ident: ref27/cit27
  doi: 10.1016/j.tsf.2007.03.007
– ident: ref15/cit15
  doi: 10.1063/1.4993908
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Snippet The local atomic structure and nanoscale chemistry of ferroelectric aluminum scandium nitride thin films (Al1–x Sc x N) are examined using advanced...
The local atomic structure and nanoscale chemistry of ferroelectric aluminum scandium nitride thin films (Al₁–ₓScₓN) are examined using advanced transmission...
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SubjectTerms aluminum
C: Physical Properties of Materials and Interfaces
chemical composition
Chemistry
crystal structure
films (materials)
Materials Science
nitrides
scandium
Science & Technology - Other Topics
transmission electron microscopy
Title Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films
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