Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony, and Lead Bilayer Films

• Published in: Nano letters Vol. 15; no. 2; pp. 1083 - 1089
• Main Authors: Ma, Yandong, Dai, Ying, Kou, Liangzhi, Frauenheim, Thomas, Heine, Thomas
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 11.02.2015
• Subjects: Dirac states; Large band gap; Quantum spin Hall effect; Topological insulators; Two-dimensional material; Strain engineering
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/nl504037u

One of the major obstacles to a wide application range of the quantum spin Hall (QSH) effect is the lack of suitable QSH insulators with a large bulk gap. By means of first-principles calculations including relativistic effects, we predict that methyl-functionalized bismuth, antimony, and lead bilay...