High-Performance Single-Crystalline Arsenic-Doped Indium Oxide Nanowires for Transparent Thin-Film Transistors and Active Matrix Organic Light-Emitting Diode Displays

• Published in: ACS nano Vol. 3; no. 11; pp. 3383 - 3390
• Main Authors: Chen, Po-Chiang, Shen, Guozhen, Chen, Haitian, Ha, Young-geun, Wu, Chao, Sukcharoenchoke, Saowalak, Fu, Yue, Liu, Jun, Facchetti, Antonio, Marks, Tobin J, Thompson, Mark E, Zhou, Chongwu
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 24.11.2009
• Subjects: AMOLED display; transparent electronics; self-assembled gate dielectric (SAND); metal oxide nanowire synthesis

We report high-performance arsenic (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In2O3 nanowires were synthe...