Vapor−Solid Growth of One-Dimensional Layer-Structured Gallium Sulfide Nanostructures

• Published in: ACS nano Vol. 3; no. 5; pp. 1115 - 1120
• Main Authors: Shen, Guozhen, Chen, Di, Chen, Po-Chiang, Zhou, Chongwu
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 26.05.2009
• Subjects: Crystallization - methods; Gallium - chemistry; Gases - chemistry; Light; Macromolecular Substances - chemistry; Materials Testing; Molecular Conformation; Nanostructures - chemistry; Nanostructures - ultrastructure; Nanotechnology - methods; Particle Size; Scattering, Radiation; Sulfides - chemistry; Surface Properties; GaS; nanobelts; photoluminescence; nanowires; semiconductor

Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanob...