Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene
Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote...
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Published in | ACS nano Vol. 15; no. 6; pp. 10587 - 10596 |
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Main Authors | , , , , , , , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
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United States
American Chemical Society
22.06.2021
American Chemical Society (ACS) |
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Abstract | Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigation and utilization of electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D–2D–3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate–graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. We show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provides key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene–substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form. |
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AbstractList | Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigating and utilizing electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D-2D-3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate-graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. Further, we show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provide key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene-substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form. Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigation and utilization of electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D–2D–3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate–graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. We show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provides key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene–substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form. |
Author | Qiao, Kuan Shin, Heechang Liu, Yunpeng Ji, You Jin Lee, Jae-Hyun Kim, Hyunseok Kim, Ki Hyun Choi, Chanyeol Bae, Sang-Hoon Dong, Chengye Lee, Sangho Yeom, Geun Young Ahn, Jong-Hyun Kim, Jeehwan Xie, Saien Robinson, Joshua A Kum, Hyun S Schlom, Darrell G Lu, Kuangye Kim, Ki Seok Paik, Hanjong Lee, June Hyuk |
AuthorAffiliation | Kavli Institute at Cornell for Nanoscale Science School of Electrical and Electronic Engineering The Pennsylvania State University Neutron Science Division Microsystems Technology Laboratories Research Laboratory of Electronics Department of Materials Science and Engineering Sungkyunkwan University Department of Energy Systems Research and Department of Materials Science and Engineering Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology School of Advanced Materials Science and Engineering SKKU Advanced Institute of Nano Technology (SAINT) Department of Mechanical Engineering 2D Crystal Consortium Leibniz-Institut für Kristallzüchtung |
AuthorAffiliation_xml | – name: School of Advanced Materials Science and Engineering – name: Research Laboratory of Electronics – name: Sungkyunkwan University – name: Leibniz-Institut für Kristallzüchtung – name: School of Electrical and Electronic Engineering – name: Department of Electrical Engineering and Computer Science – name: Department of Energy Systems Research and Department of Materials Science and Engineering – name: Massachusetts Institute of Technology – name: Kavli Institute at Cornell for Nanoscale Science – name: Department of Mechanical Engineering – name: Neutron Science Division – name: 2D Crystal Consortium – name: The Pennsylvania State University – name: Microsystems Technology Laboratories – name: Department of Materials Science and Engineering – name: SKKU Advanced Institute of Nano Technology (SAINT) |
Author_xml | – sequence: 1 givenname: Hyunseok orcidid: 0000-0003-3091-8413 surname: Kim fullname: Kim, Hyunseok organization: Department of Mechanical Engineering – sequence: 2 givenname: Kuangye surname: Lu fullname: Lu, Kuangye organization: Department of Mechanical Engineering – sequence: 3 givenname: Yunpeng surname: Liu fullname: Liu, Yunpeng organization: Department of Mechanical Engineering – sequence: 4 givenname: Hyun S surname: Kum fullname: Kum, Hyun S organization: Department of Mechanical Engineering – sequence: 5 givenname: Ki Seok surname: Kim fullname: Kim, Ki Seok organization: Massachusetts Institute of Technology – sequence: 6 givenname: Kuan surname: Qiao fullname: Qiao, Kuan organization: Department of Mechanical Engineering – sequence: 7 givenname: Sang-Hoon surname: Bae fullname: Bae, Sang-Hoon organization: Department of Mechanical Engineering – sequence: 8 givenname: Sangho orcidid: 0000-0003-4164-1827 surname: Lee fullname: Lee, Sangho organization: Massachusetts Institute of Technology – sequence: 9 givenname: You Jin surname: Ji fullname: Ji, You Jin organization: School of Advanced Materials Science and Engineering – sequence: 10 givenname: Ki Hyun surname: Kim fullname: Kim, Ki Hyun organization: School of Advanced Materials Science and Engineering – sequence: 11 givenname: Hanjong surname: Paik fullname: Paik, Hanjong organization: Department of Materials Science and Engineering – sequence: 12 givenname: Saien surname: Xie fullname: Xie, Saien organization: Kavli Institute at Cornell for Nanoscale Science – sequence: 13 givenname: Heechang surname: Shin fullname: Shin, Heechang organization: School of Electrical and Electronic Engineering – sequence: 14 givenname: Chanyeol orcidid: 0000-0003-3304-3253 surname: Choi fullname: Choi, Chanyeol organization: Massachusetts Institute of Technology – sequence: 15 givenname: June Hyuk surname: Lee fullname: Lee, June Hyuk organization: Neutron Science Division – sequence: 16 givenname: Chengye surname: Dong fullname: Dong, Chengye organization: The Pennsylvania State University – sequence: 17 givenname: Joshua A orcidid: 0000-0002-1513-7187 surname: Robinson fullname: Robinson, Joshua A organization: The Pennsylvania State University – sequence: 18 givenname: Jae-Hyun orcidid: 0000-0001-5117-8923 surname: Lee fullname: Lee, Jae-Hyun organization: Department of Energy Systems Research and Department of Materials Science and Engineering – sequence: 19 givenname: Jong-Hyun orcidid: 0000-0002-8135-7719 surname: Ahn fullname: Ahn, Jong-Hyun organization: School of Electrical and Electronic Engineering – sequence: 20 givenname: Geun Young surname: Yeom fullname: Yeom, Geun Young organization: Sungkyunkwan University – sequence: 21 givenname: Darrell G orcidid: 0000-0003-2493-6113 surname: Schlom fullname: Schlom, Darrell G organization: Leibniz-Institut für Kristallzüchtung – sequence: 22 givenname: Jeehwan orcidid: 0000-0002-1547-0967 surname: Kim fullname: Kim, Jeehwan email: jeehwan@mit.edu organization: Massachusetts Institute of Technology |
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Cites_doi | 10.1002/smll.200901173 10.7567/APEX.7.071001 10.1126/sciadv.aaz5180 10.1038/nnano.2013.46 10.1021/acs.nanolett.9b02696 10.1126/science.1195403 10.1073/pnas.1620176114 10.1063/1.98946 10.1088/0953-8984/10/11/011 10.1021/nl203058s 10.1088/0957-4484/21/43/435603 10.1016/j.carbon.2011.08.002 10.1088/0022-3727/46/15/152002 10.1073/pnas.1102650108 10.1039/C9NR01700C 10.1063/1.5064542 10.1038/s41928-019-0314-2 10.1038/s41467-019-12056-1 10.1126/science.1242988 10.1021/acs.chemmater.7b01276 10.1016/j.carbon.2013.05.052 10.1103/RevModPhys.42.317 10.1038/nmat4742 10.1016/j.jpcs.2018.09.012 10.1007/s12274-013-0317-7 10.1021/nn201207c 10.1002/smll.201802995 10.1038/s41565-019-0555-2 10.1038/nature22053 10.1038/s41563-018-0176-4 10.1038/nnano.2010.132 10.1002/admi.201400230 10.1016/j.jsamd.2017.05.007 10.1126/science.1252268 10.1088/0022-3719/16/22/010 10.1063/1.120816 10.1038/s41565-020-0633-5 10.1088/1361-6528/ab4501 10.1021/nl801457b 10.1039/C7CE01064H 10.1038/s41586-020-1939-z |
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References | ref9/cit9 ref6/cit6 ref36/cit36 ref3/cit3 ref27/cit27 ref18/cit18 ref11/cit11 ref25/cit25 ref16/cit16 ref29/cit29 ref32/cit32 ref23/cit23 ref39/cit39 ref14/cit14 ref8/cit8 ref5/cit5 ref31/cit31 ref2/cit2 Stringfellow G. B. (ref43/cit43) 1999 ref34/cit34 ref37/cit37 ref28/cit28 ref40/cit40 ref20/cit20 Bomben K. D. (ref22/cit22) 1992 ref17/cit17 ref10/cit10 ref26/cit26 ref35/cit35 ref19/cit19 ref21/cit21 ref12/cit12 ref15/cit15 ref42/cit42 ref41/cit41 ref13/cit13 ref33/cit33 ref4/cit4 ref30/cit30 ref1/cit1 ref24/cit24 ref38/cit38 ref7/cit7 |
References_xml | – ident: ref21/cit21 doi: 10.1002/smll.200901173 – ident: ref39/cit39 doi: 10.7567/APEX.7.071001 – ident: ref12/cit12 doi: 10.1126/sciadv.aaz5180 – ident: ref20/cit20 doi: 10.1038/nnano.2013.46 – ident: ref8/cit8 doi: 10.1021/acs.nanolett.9b02696 – ident: ref36/cit36 doi: 10.1126/science.1195403 – ident: ref19/cit19 doi: 10.1073/pnas.1620176114 – ident: ref2/cit2 doi: 10.1063/1.98946 – ident: ref32/cit32 doi: 10.1088/0953-8984/10/11/011 – ident: ref28/cit28 doi: 10.1021/nl203058s – ident: ref40/cit40 doi: 10.1088/0957-4484/21/43/435603 – ident: ref27/cit27 doi: 10.1016/j.carbon.2011.08.002 – ident: ref4/cit4 doi: 10.1088/0022-3727/46/15/152002 – ident: ref5/cit5 doi: 10.1073/pnas.1102650108 – ident: ref10/cit10 doi: 10.1039/C9NR01700C – volume-title: Organometallic Vapor-Phase Epitaxy: Theory and Practice year: 1999 ident: ref43/cit43 contributor: fullname: Stringfellow G. B. – volume-title: Handbook of X-Ray Photoelectron Spectroscopy year: 1992 ident: ref22/cit22 contributor: fullname: Bomben K. D. – ident: ref14/cit14 doi: 10.1063/1.5064542 – ident: ref1/cit1 doi: 10.1038/s41928-019-0314-2 – ident: ref9/cit9 doi: 10.1038/s41467-019-12056-1 – ident: ref18/cit18 doi: 10.1126/science.1242988 – ident: ref29/cit29 doi: 10.1021/acs.chemmater.7b01276 – ident: ref25/cit25 doi: 10.1016/j.carbon.2013.05.052 – ident: ref30/cit30 doi: 10.1103/RevModPhys.42.317 – ident: ref42/cit42 doi: 10.1038/nmat4742 – ident: ref33/cit33 doi: 10.1016/j.jpcs.2018.09.012 – ident: ref34/cit34 doi: 10.1007/s12274-013-0317-7 – ident: ref17/cit17 doi: 10.1021/nn201207c – ident: ref41/cit41 doi: 10.1002/smll.201802995 – ident: ref16/cit16 doi: 10.1038/s41565-019-0555-2 – ident: ref6/cit6 doi: 10.1038/nature22053 – ident: ref7/cit7 doi: 10.1038/s41563-018-0176-4 – ident: ref23/cit23 doi: 10.1038/nnano.2010.132 – ident: ref37/cit37 doi: 10.1002/admi.201400230 – ident: ref35/cit35 doi: 10.1016/j.jsamd.2017.05.007 – ident: ref26/cit26 doi: 10.1126/science.1252268 – ident: ref31/cit31 doi: 10.1088/0022-3719/16/22/010 – ident: ref3/cit3 doi: 10.1063/1.120816 – ident: ref11/cit11 doi: 10.1038/s41565-020-0633-5 – ident: ref15/cit15 doi: 10.1088/1361-6528/ab4501 – ident: ref24/cit24 doi: 10.1021/nl801457b – ident: ref38/cit38 doi: 10.1039/C7CE01064H – ident: ref13/cit13 doi: 10.1038/s41586-020-1939-z |
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SubjectTerms | graphene heterointegration INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY ionicity remote epitaxy single-crystal membrane transfer process |
Title | Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene |
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