Efficient Modulation of 1.55 μm Radiation with Gated Graphene on a Silicon Microring Resonator

• Published in: Nano letters Vol. 14; no. 12; pp. 6811 - 6815
• Main Authors: Qiu, Ciyuan, Gao, Weilu, Vajtai, Robert, Ajayan, Pulickel M, Kono, Junichiro, Xu, Qianfan
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 10.12.2014
• Subjects: Amplitude modulation; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Graphene; Materials science; Modulation; Modulators; Nanostructure; Physics; Resonators; Silicon; Specific materials; Tuning; NIR modulator; Graphene photonics; silicon microring resonator; high on/off ratio; Near infrared radiation; Electronic structure; Fermi level; Quality factor; Graphene; Resonance frequency; Silicon; Light absorption; Chip; Resonators; Gates; Semiconductor technology

The gate-controllability of the Fermi-edge onset of interband absorption in graphene can be utilized to modulate near-infrared radiation in the telecommunication band. However, a high modulation efficiency has not been demonstrated to date, because of the small amount of light absorption in graphene...