Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation

• Published in: Nano letters Vol. 11; no. 10; pp. 4246 - 4250
• Main Authors: Ryu, Boram, Lee, Young Tack, Lee, Kwang H, Ha, Ryong, Park, Ji Hoon, Choi, Heon-Jin, Im, Seongil
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 12.10.2011
• Subjects: Applied sciences; Circuits; Cross-disciplinary physics: materials science; rheology; Diodes; Dynamics; Electronics; Exact sciences and technology; Interfaces; Materials science; Molecular electronics, nanoelectronics; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanowires; Passivation; Physics; Quantum wires; Rectification; Schottky diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Wire; Zinc oxide; dynamic rectification; ZnO nanowire; surface passivation; photostable; face-to-face connection; Schottky diode; Aluminium oxide; Atomic layer method; Nanowire device; Doping; Zinc oxide; Nanowires; Schottky barrier diode; Nanostructured materials; Nanoelectronics
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl202239c

For the first time, we demonstrated photostable and dynamic rectification in ZnO nanowire (NW) Schottky diode circuits where two diodes are face-to-face connected in the same ZnO wire. With their properties improved by H-doping from atomic layer deposited Al2O3 passivation, our ZnO NW diode circuits stably operated at a maximum frequency of 100 Hz displaying a good rectification even under the lights. We thus conclude that our results promisingly appoached one-dimensional nanoelectronics.