Detection of Charge Storage on Molecular Thin Films of Tris(8-hydroxyquinoline) Aluminum (Alq3) by Kelvin Force Microscopy: A Candidate System for High Storage Capacity Memory Cells
Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq3) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq3 films. After the charge injection, Kelvin force microscopy measurements reveal minim...
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Published in | Nano letters Vol. 12; no. 3; pp. 1260 - 1264 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
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American Chemical Society
14.03.2012
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Abstract | Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq3) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq3 films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq3 films, even for high hole and electron densities of >1012 cm–2. We show that this finding is consistent with the very low mobility of charge carriers in Alq3 thin films (<10–7 cm2/(Vs)) and that it can benefit from the use of Alq3 films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq3 molecules as the floating gate are fabricated and measured, showing durability over more than 104 program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 1013 cm–2. These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. |
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AbstractList | Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq sub(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq sub(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq sub(3) films, even for high hole and electron densities of >10 super(12) cm super(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq sub(3) thin films (<10 super(-7) cm super(2)/(Vs)) and that it can benefit from the use of Alq sub(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq sub(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10 super(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 10 super(13) cm super(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq3) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq3 films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq3 films, even for high hole and electron densities of >1012 cm–2. We show that this finding is consistent with the very low mobility of charge carriers in Alq3 thin films (<10–7 cm2/(Vs)) and that it can benefit from the use of Alq3 films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq3 molecules as the floating gate are fabricated and measured, showing durability over more than 104 program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 1013 cm–2. These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. |
Author | Paydavosi, Sarah Osedach, Timothy P Brown, Patrick R Aidala, Katherine E Hoyt, Judy L Hashemi, Pouya Supran, Geoffrey J Bulović, Vladimir |
AuthorAffiliation | Massachusetts Institute of Technology Mount Holyoke College |
AuthorAffiliation_xml | – name: Mount Holyoke College – name: Massachusetts Institute of Technology |
Author_xml | – sequence: 1 givenname: Sarah surname: Paydavosi fullname: Paydavosi, Sarah – sequence: 2 givenname: Katherine E surname: Aidala fullname: Aidala, Katherine E – sequence: 3 givenname: Patrick R surname: Brown fullname: Brown, Patrick R – sequence: 4 givenname: Pouya surname: Hashemi fullname: Hashemi, Pouya – sequence: 5 givenname: Geoffrey J surname: Supran fullname: Supran, Geoffrey J – sequence: 6 givenname: Timothy P surname: Osedach fullname: Osedach, Timothy P – sequence: 7 givenname: Judy L surname: Hoyt fullname: Hoyt, Judy L – sequence: 8 givenname: Vladimir surname: Bulović fullname: Bulović, Vladimir email: bulovic@mit.edu |
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Keywords | tris(8-hydroxyquinoline) aluminum nonvolatile Alq3 Kelvin force microscopy Flash memory charge storage molecules organic Charge storage Atomic force microscopy Force measurement Charge carriers Capacitors Hole density High density Aluminium compounds Quinoline derivatives Aluminium Flash memories Thin films Charge density Charge carrier trapping Charge injection Non volatile memory Gallium tellurides Electron density Diffusion Gates Hysteresis Via hole |
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Snippet | Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq3) molecular thin films are investigated by injecting electrons and holes via a... Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a... Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq sub(3)) molecular thin films are investigated by injecting electrons and holes via... |
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SubjectTerms | Aluminum Charge Computer Storage Devices Condensed matter: structure, mechanical and thermal properties Diffusion in nanoscale solids Diffusion in solids Durability Energy Transfer Equipment Design Equipment Failure Analysis Exact sciences and technology Gates Macromolecular Substances - chemistry Materials Testing Membranes, Artificial Memory (computers) Microscopy Microscopy, Atomic Force - methods Molecular Conformation Nanostructure Nanostructures - chemistry Nanostructures - ultrastructure Organometallic Compounds - chemistry Particle Size Physics Static Electricity Storage capacity Surface Properties Thin films Transport properties of condensed matter (nonelectronic) |
Title | Detection of Charge Storage on Molecular Thin Films of Tris(8-hydroxyquinoline) Aluminum (Alq3) by Kelvin Force Microscopy: A Candidate System for High Storage Capacity Memory Cells |
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