Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering
A simple, reliable, and self-switchable spin–orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt si...
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Published in | ACS nano Vol. 16; no. 8; pp. 12462 - 12470 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
23.08.2022
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Subjects | |
Online Access | Get full text |
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