Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering

A simple, reliable, and self-switchable spin–orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt si...

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Bibliographic Details
Published inACS nano Vol. 16; no. 8; pp. 12462 - 12470
Main Authors Huang, Qikun, Guan, Chaoshuai, Fan, Yibo, Zhao, Xiaonan, Han, Xiang, Dong, Yanan, Xie, Xuejie, Zhou, Tie, Bai, Lihui, Peng, Yong, Tian, Yufeng, Yan, Shishen
Format Journal Article
LanguageEnglish
Published American Chemical Society 23.08.2022
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