Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications

• Published in: ACS applied nano materials Vol. 2; no. 8; pp. 4765 - 4772
• Main Authors: Bolshedvorskii, Stepan V, Zeleneev, Anton I, Vorobyov, Vadim V, Soshenko, Vladimir V, Rubinas, Olga R, Zhulikov, Leonid A, Pivovarov, Pavel A, Sorokin, Vadim N, Smolyaninov, Andrey N, Kulikova, Liudmila F, Garanina, Anastasiia S, Lyapin, Sergey G, Agafonov, Viatcheslav N, Uzbekov, Rustem E, Davydov, Valery A, Akimov, Alexey V
• Format: Journal Article
• Language: English
• Published: American Chemical Society 23.08.2019
• Subjects: Condensed Matter; Materials Science; Physics; SiV centers; strain; photons; single photon sources; nanodiamonds; high pressure high temperature; diamond growth

Ultrasmall (about 10 nm), low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to artificially produce such diamonds. Here, we report on t...