APA (7th ed.) Citation

Bolshedvorskii, S. V., Zeleneev, A. I., Vorobyov, V. V., Soshenko, V. V., Rubinas, O. R., Zhulikov, L. A., . . . Akimov, A. V. (2019). Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications. ACS applied nano materials, 2(8), 4765-4772. https://doi.org/10.1021/acsanm.9b00580

Chicago Style (17th ed.) Citation

Bolshedvorskii, Stepan V., et al. "Single Silicon Vacancy Centers in 10 Nm Diamonds for Quantum Information Applications." ACS Applied Nano Materials 2, no. 8 (2019): 4765-4772. https://doi.org/10.1021/acsanm.9b00580.

MLA (9th ed.) Citation

Bolshedvorskii, Stepan V., et al. "Single Silicon Vacancy Centers in 10 Nm Diamonds for Quantum Information Applications." ACS Applied Nano Materials, vol. 2, no. 8, 2019, pp. 4765-4772, https://doi.org/10.1021/acsanm.9b00580.