Ionic Field Screening in MAPbBr3 Crystals Revealed from Remnant Sensitivity in X‑ray Detection
Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials for high-sensitivity applications. However, the contact degradation and the long-term instability of the current limit the performance of the...
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Published in | ACS Physical Chemistry Au Vol. 3; no. 4; pp. 386 - 393 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
26.07.2023
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Subjects | |
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Abstract | Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials for high-sensitivity applications. However, the contact degradation and the long-term instability of the current limit the performance of the devices, in close causality with the dual electronic-ionic conductivity of these perovskites. Herein, millimeter-thick methylammonium-lead bromide (MAPbBr3) single and polycrystalline samples are approached by characterizing their long-term dark current and photocurrent under X-ray incidence. It is shown how both the dark current and the sensitivity of the detectors follow similar trends at short-circuit (V = 0 V) after biasing. By performing drift-diffusion numerical simulations, it is revealed how large ionic-related built-in fields not only produce relaxations to equilibrium lasting up to tens of hours but also continue to affect the charge kinetics under homogeneous low photogeneration rates. Furthermore, a method is suggested for estimating the ionic mobility and concentration by analyzing the initial current at short-circuit and the characteristic diffusion times. |
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AbstractList | Research on metal halide perovskites as absorbers for
X-ray detection
is an attractive subject due to the optimal optoelectronic properties
of these materials for high-sensitivity applications. However, the
contact degradation and the long-term instability of the current limit
the performance of the devices, in close causality with the dual electronic-ionic
conductivity of these perovskites. Herein, millimeter-thick methylammonium-lead
bromide (MAPbBr
3
) single and polycrystalline samples are
approached by characterizing their long-term dark current and photocurrent
under X-ray incidence. It is shown how both the dark current and the
sensitivity of the detectors follow similar trends at short-circuit
(
V
= 0 V) after biasing. By performing drift-diffusion
numerical simulations, it is revealed how large ionic-related built-in
fields not only produce relaxations to equilibrium lasting up to tens
of hours but also continue to affect the charge kinetics under homogeneous
low photogeneration rates. Furthermore, a method is suggested for
estimating the ionic mobility and concentration by analyzing the initial
current at short-circuit and the characteristic diffusion times. Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials for high-sensitivity applications. However, the contact degradation and the long-term instability of the current limit the performance of the devices, in close causality with the dual electronic-ionic conductivity of these perovskites. Herein, millimeter-thick methylammonium-lead bromide (MAPbBr$_3$) single and polycrystalline samples are approached by characterizing their long-term dark current and photocurrent under X-ray incidence. It is shown how both the dark current and the sensitivity of the detectors follow similar trends at short-circuit (V = 0 V) after biasing. By performing drift-diffusion numerical simulations, it is revealed how large ionic-related built-in fields not only produce relaxations to equilibrium lasting up to tens of hours but also continue to affect the charge kinetics under homogeneous low photogeneration rates. Furthermore, a method is suggested for estimating the ionic mobility and concentration by analyzing the initial current at short-circuit and the characteristic diffusion times. Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials for high-sensitivity applications. However, the contact degradation and the long-term instability of the current limit the performance of the devices, in close causality with the dual electronic-ionic conductivity of these perovskites. Herein, millimeter-thick methylammonium-lead bromide (MAPbBr3) single and polycrystalline samples are approached by characterizing their long-term dark current and photocurrent under X-ray incidence. It is shown how both the dark current and the sensitivity of the detectors follow similar trends at short-circuit (V = 0 V) after biasing. By performing drift-diffusion numerical simulations, it is revealed how large ionic-related built-in fields not only produce relaxations to equilibrium lasting up to tens of hours but also continue to affect the charge kinetics under homogeneous low photogeneration rates. Furthermore, a method is suggested for estimating the ionic mobility and concentration by analyzing the initial current at short-circuit and the characteristic diffusion times.Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials for high-sensitivity applications. However, the contact degradation and the long-term instability of the current limit the performance of the devices, in close causality with the dual electronic-ionic conductivity of these perovskites. Herein, millimeter-thick methylammonium-lead bromide (MAPbBr3) single and polycrystalline samples are approached by characterizing their long-term dark current and photocurrent under X-ray incidence. It is shown how both the dark current and the sensitivity of the detectors follow similar trends at short-circuit (V = 0 V) after biasing. By performing drift-diffusion numerical simulations, it is revealed how large ionic-related built-in fields not only produce relaxations to equilibrium lasting up to tens of hours but also continue to affect the charge kinetics under homogeneous low photogeneration rates. Furthermore, a method is suggested for estimating the ionic mobility and concentration by analyzing the initial current at short-circuit and the characteristic diffusion times. Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials for high-sensitivity applications. However, the contact degradation and the long-term instability of the current limit the performance of the devices, in close causality with the dual electronic-ionic conductivity of these perovskites. Herein, millimeter-thick methylammonium-lead bromide (MAPbBr3) single and polycrystalline samples are approached by characterizing their long-term dark current and photocurrent under X-ray incidence. It is shown how both the dark current and the sensitivity of the detectors follow similar trends at short-circuit (V = 0 V) after biasing. By performing drift-diffusion numerical simulations, it is revealed how large ionic-related built-in fields not only produce relaxations to equilibrium lasting up to tens of hours but also continue to affect the charge kinetics under homogeneous low photogeneration rates. Furthermore, a method is suggested for estimating the ionic mobility and concentration by analyzing the initial current at short-circuit and the characteristic diffusion times. |
Author | Lemercier, Thibault Lédée, Ferdinand García-Batlle, Marisé Almora, Osbel Zaccaro, Julien Guillén, Javier Mayén Verilhac, Jean-Marie Marsal, Lluis F. López-Varo, Pilar Alvarez, Agustin O. Garcia-Belmonte, Germà Gros-Daillon, Eric |
AuthorAffiliation | Grenoble Alpes University, CNRS, Grenoble INP, Institut Néel Universitat Rovira i Virgili Institute of Advanced Materials Department of Electronic, Electric and Automatic Engineering Grenoble Alpes University, CEA, LETI, DOPT Grenoble Alpes University, CEA, LITEN, DTNM Institut Photovoltaïque d’Ile-de-France (IPVF) |
AuthorAffiliation_xml | – name: Institut Photovoltaïque d’Ile-de-France (IPVF) – name: Grenoble Alpes University, CNRS, Grenoble INP, Institut Néel – name: Department of Electronic, Electric and Automatic Engineering – name: Universitat Rovira i Virgili – name: Grenoble Alpes University, CEA, LITEN, DTNM – name: Institute of Advanced Materials – name: Grenoble Alpes University, CEA, LETI, DOPT |
Author_xml | – sequence: 1 givenname: Agustin O. orcidid: 0000-0002-0920-5390 surname: Alvarez fullname: Alvarez, Agustin O. organization: Institute of Advanced Materials – sequence: 2 givenname: Ferdinand orcidid: 0000-0001-9949-0529 surname: Lédée fullname: Lédée, Ferdinand organization: Grenoble Alpes University, CEA, LETI, DOPT – sequence: 3 givenname: Marisé orcidid: 0000-0002-9142-2430 surname: García-Batlle fullname: García-Batlle, Marisé organization: Institute of Advanced Materials – sequence: 4 givenname: Pilar surname: López-Varo fullname: López-Varo, Pilar organization: Institut Photovoltaïque d’Ile-de-France (IPVF) – sequence: 5 givenname: Eric orcidid: 0000-0002-4196-7854 surname: Gros-Daillon fullname: Gros-Daillon, Eric organization: Grenoble Alpes University, CEA, LETI, DOPT – sequence: 6 givenname: Javier Mayén orcidid: 0000-0002-2732-3809 surname: Guillén fullname: Guillén, Javier Mayén organization: Grenoble Alpes University, CEA, LITEN, DTNM – sequence: 7 givenname: Jean-Marie surname: Verilhac fullname: Verilhac, Jean-Marie organization: Grenoble Alpes University, CEA, LITEN, DTNM – sequence: 8 givenname: Thibault surname: Lemercier fullname: Lemercier, Thibault organization: Grenoble Alpes University, CNRS, Grenoble INP, Institut Néel – sequence: 9 givenname: Julien orcidid: 0000-0002-8150-3827 surname: Zaccaro fullname: Zaccaro, Julien organization: Grenoble Alpes University, CNRS, Grenoble INP, Institut Néel – sequence: 10 givenname: Lluis F. orcidid: 0000-0002-5976-1408 surname: Marsal fullname: Marsal, Lluis F. organization: Universitat Rovira i Virgili – sequence: 11 givenname: Germà orcidid: 0000-0002-0172-6175 surname: Garcia-Belmonte fullname: Garcia-Belmonte, Germà email: garciag@uji.es organization: Institute of Advanced Materials – sequence: 12 givenname: Osbel orcidid: 0000-0002-2523-0203 surname: Almora fullname: Almora, Osbel email: osbel.almora@urv.cat organization: Universitat Rovira i Virgili |
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Keywords | X-ray detectors ion diffusion ion migration sensitivity metal halide perovskites |
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Snippet | Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials... Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials... |
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StartPage | 386 |
SubjectTerms | Condensed Matter Materials Science Physics |
Title | Ionic Field Screening in MAPbBr3 Crystals Revealed from Remnant Sensitivity in X‑ray Detection |
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