Distinguishing Interface Magnetoresistance and Bulk Magnetoresistance through Rectification of Schottky Heterojunctions
High performance of many spintronic devices strongly depends on the spin-polarized electrical transport, especially the magnetoresistance (MR) in magnetic heterojunctions. However, it has been a great challenge to distinguish the bulk MR and interface MR by transport measurements because the bulk re...
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| Published in | ACS applied materials & interfaces Vol. 10; no. 29; pp. 24905 - 24909 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
25.07.2018
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1944-8244 1944-8252 1944-8252 |
| DOI | 10.1021/acsami.8b06929 |
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| Abstract | High performance of many spintronic devices strongly depends on the spin-polarized electrical transport, especially the magnetoresistance (MR) in magnetic heterojunctions. However, it has been a great challenge to distinguish the bulk MR and interface MR by transport measurements because the bulk resistance and interface resistance formed a series circuit in magnetic heterojunctions. Here, a unique interface-sensitive rectification MR method is proposed to distinguish the interface MR and bulk MR of nonmagnetic In/GeO x /n-Ge and magnetic Co/GeO x /n-Ge diode-like heterojunctions. It is demonstrated that the low-field “butterfly” hysteresis loop observed only in the conventional MR curve originates from the anisotropic MR of ferromagnetic bulk Co layer, whereas the orbit-related large nonsaturating positive MR contains contributions from both the Schottky interface and bulk Ge substrate. This rectification MR method could be extended to magnetic heterojunctions with asymmetric potential barriers to realize a deeper understanding of the fundamental interface-related functionalities. |
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| AbstractList | High performance of many spintronic devices strongly depends on the spin-polarized electrical transport, especially the magnetoresistance (MR) in magnetic heterojunctions. However, it has been a great challenge to distinguish the bulk MR and interface MR by transport measurements because the bulk resistance and interface resistance formed a series circuit in magnetic heterojunctions. Here, a unique interface-sensitive rectification MR method is proposed to distinguish the interface MR and bulk MR of nonmagnetic In/GeO x /n-Ge and magnetic Co/GeO x /n-Ge diode-like heterojunctions. It is demonstrated that the low-field “butterfly” hysteresis loop observed only in the conventional MR curve originates from the anisotropic MR of ferromagnetic bulk Co layer, whereas the orbit-related large nonsaturating positive MR contains contributions from both the Schottky interface and bulk Ge substrate. This rectification MR method could be extended to magnetic heterojunctions with asymmetric potential barriers to realize a deeper understanding of the fundamental interface-related functionalities. High performance of many spintronics devices strongly depends on the spin-polarized electrical transport, especially the magnetoresistance (MR) in magnetic heterojunctions. But it has been a great challenge to distinguish the bulk MR and interface MR by transport measurements because the bulk resistance and interface resistance formed a series circuit in magnetic heterojunctions. Here, a unique interface sensitive rectification MR method is proposed to distinguish the interface MR and bulk MR of non-magnetic In/GeO / n-Ge and magnetic Co/GeO / n-Ge diode-like heterojunctions. It is demonstrated that the low field"butterfly" hysteresis loop observed only in the conventional MR curve originates from the anisotropic MR of ferromagnetic bulk Co layer, while the orbit-related large non-saturating positive MR contains contributions from both the Schottky interface and bulk Ge substrate. This rectification MR method could be extended to magnetic heterojunctions with asymmetric potential barriers to realize a deeper understanding of the fundamental interface-related functionalities. High performance of many spintronic devices strongly depends on the spin-polarized electrical transport, especially the magnetoresistance (MR) in magnetic heterojunctions. However, it has been a great challenge to distinguish the bulk MR and interface MR by transport measurements because the bulk resistance and interface resistance formed a series circuit in magnetic heterojunctions. Here, a unique interface-sensitive rectification MR method is proposed to distinguish the interface MR and bulk MR of nonmagnetic In/GeO x/n-Ge and magnetic Co/GeO x/n-Ge diode-like heterojunctions. It is demonstrated that the low-field "butterfly" hysteresis loop observed only in the conventional MR curve originates from the anisotropic MR of ferromagnetic bulk Co layer, whereas the orbit-related large nonsaturating positive MR contains contributions from both the Schottky interface and bulk Ge substrate. This rectification MR method could be extended to magnetic heterojunctions with asymmetric potential barriers to realize a deeper understanding of the fundamental interface-related functionalities.High performance of many spintronic devices strongly depends on the spin-polarized electrical transport, especially the magnetoresistance (MR) in magnetic heterojunctions. However, it has been a great challenge to distinguish the bulk MR and interface MR by transport measurements because the bulk resistance and interface resistance formed a series circuit in magnetic heterojunctions. Here, a unique interface-sensitive rectification MR method is proposed to distinguish the interface MR and bulk MR of nonmagnetic In/GeO x/n-Ge and magnetic Co/GeO x/n-Ge diode-like heterojunctions. It is demonstrated that the low-field "butterfly" hysteresis loop observed only in the conventional MR curve originates from the anisotropic MR of ferromagnetic bulk Co layer, whereas the orbit-related large nonsaturating positive MR contains contributions from both the Schottky interface and bulk Ge substrate. This rectification MR method could be extended to magnetic heterojunctions with asymmetric potential barriers to realize a deeper understanding of the fundamental interface-related functionalities. High performance of many spintronic devices strongly depends on the spin-polarized electrical transport, especially the magnetoresistance (MR) in magnetic heterojunctions. However, it has been a great challenge to distinguish the bulk MR and interface MR by transport measurements because the bulk resistance and interface resistance formed a series circuit in magnetic heterojunctions. Here, a unique interface-sensitive rectification MR method is proposed to distinguish the interface MR and bulk MR of nonmagnetic In/GeOₓ/n-Ge and magnetic Co/GeOₓ/n-Ge diode-like heterojunctions. It is demonstrated that the low-field “butterfly” hysteresis loop observed only in the conventional MR curve originates from the anisotropic MR of ferromagnetic bulk Co layer, whereas the orbit-related large nonsaturating positive MR contains contributions from both the Schottky interface and bulk Ge substrate. This rectification MR method could be extended to magnetic heterojunctions with asymmetric potential barriers to realize a deeper understanding of the fundamental interface-related functionalities. |
| Author | Lu, Shiyang Dai, Youyong Tian, Yufeng Yan, Shishen Bai, Lihui Chen, Yanxue Wang, Jing Huang, Qikun |
| AuthorAffiliation | School of Physics & Electronic Engineering School of Physics, State Key Laboratory of Crystal Materials Kashgar University |
| AuthorAffiliation_xml | – name: School of Physics, State Key Laboratory of Crystal Materials – name: School of Physics & Electronic Engineering – name: Kashgar University |
| Author_xml | – sequence: 1 givenname: Qikun surname: Huang fullname: Huang, Qikun organization: School of Physics, State Key Laboratory of Crystal Materials – sequence: 2 givenname: Jing surname: Wang fullname: Wang, Jing organization: School of Physics, State Key Laboratory of Crystal Materials – sequence: 3 givenname: Shiyang surname: Lu fullname: Lu, Shiyang organization: School of Physics, State Key Laboratory of Crystal Materials – sequence: 4 givenname: Yanxue surname: Chen fullname: Chen, Yanxue organization: School of Physics, State Key Laboratory of Crystal Materials – sequence: 5 givenname: Lihui surname: Bai fullname: Bai, Lihui organization: School of Physics, State Key Laboratory of Crystal Materials – sequence: 6 givenname: Youyong surname: Dai fullname: Dai, Youyong organization: School of Physics, State Key Laboratory of Crystal Materials – sequence: 7 givenname: Yufeng orcidid: 0000-0003-0791-1635 surname: Tian fullname: Tian, Yufeng email: yftian@sdu.edu.cn organization: School of Physics, State Key Laboratory of Crystal Materials – sequence: 8 givenname: Shishen surname: Yan fullname: Yan, Shishen email: shishenyan@sdu.edu.cn organization: Kashgar University |
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| CitedBy_id | crossref_primary_10_1051_matecconf_202133605023 crossref_primary_10_1063_1_5097736 crossref_primary_10_1109_LED_2020_2969998 crossref_primary_10_1016_j_carbon_2022_01_022 crossref_primary_10_1002_adfm_202316725 crossref_primary_10_1088_1674_1056_ad15f8 |
| Cites_doi | 10.1103/physrevlett.92.256601 10.1038/nphys675 10.1088/0022-3719/3/1s/310 10.1038/nature07711 10.1103/PhysRevLett.115.016803 10.1038/ncomms1192 10.1103/PhysRevLett.93.097602 10.1063/1.4815998 10.1038/srep37748 10.1038/ncomms3944 10.1063/1.3097235 10.1063/1.3206664 10.1007/s11433-012-4971-7 10.1126/science.1146006 10.1126/science.1181862 10.1116/1.590812 10.1063/1.3664116 10.1038/nature07576 10.1146/annurev-matsci-070813-113315 10.1002/admi.201300001 10.1063/1.2203204 10.1038/nature02308 10.1038/srep14249 10.1063/1.4879463 10.1126/science.1065389 10.1038/nmat1931 10.1063/1.4730960 10.1126/science.1131091 10.1002/adfm.201202695 10.1038/srep10255 10.1103/PhysRevB.59.11914 |
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| Title | Distinguishing Interface Magnetoresistance and Bulk Magnetoresistance through Rectification of Schottky Heterojunctions |
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