Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates
Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated b...
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Published in | Crystal growth & design Vol. 22; no. 10; pp. 6039 - 6045 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
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American Chemical Society
05.10.2022
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Abstract | Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between the GaAs(001) substrate and TaAs epilayer, no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected by transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in situ reflection high-energy electron diffraction images indicate that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer’s surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure. |
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AbstractList | Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between the GaAs(001) substrate and TaAs epilayer, no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected by transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in situ reflection high-energy electron diffraction images indicate that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer’s surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure. Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45 degrees. In spite of a substantial lattice mismatch (about 19%) between the GaAs(001) substrate and TaAs epilayer, no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected by transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in situ reflection high-energy electron diffraction images indicate that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer's surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure. |
Author | Kret, Sławomir Seredyński, Bartłomiej Gryglas-Borysiewicz, Marta Domagała, Jarosław Z. Ogorzałek, Zuzanna Bożek, Rafał Zajkowska, Wiktoria Pacuski, Wojciech Sadowski, Janusz |
AuthorAffiliation | Institute of Experimental Physics, Faculty of Physics Linnaeus University Department of Physics and Electrical Engineering |
AuthorAffiliation_xml | – name: Institute of Experimental Physics, Faculty of Physics – name: Department of Physics and Electrical Engineering – name: Linnaeus University |
Author_xml | – sequence: 1 givenname: Janusz orcidid: 0000-0002-9495-2648 surname: Sadowski fullname: Sadowski, Janusz email: janusz.sadowski@lnu.se organization: Linnaeus University – sequence: 2 givenname: Jarosław Z. surname: Domagała fullname: Domagała, Jarosław Z. – sequence: 3 givenname: Wiktoria orcidid: 0000-0002-7074-2283 surname: Zajkowska fullname: Zajkowska, Wiktoria – sequence: 4 givenname: Sławomir orcidid: 0000-0002-3532-5708 surname: Kret fullname: Kret, Sławomir – sequence: 5 givenname: Bartłomiej orcidid: 0000-0003-4675-0010 surname: Seredyński fullname: Seredyński, Bartłomiej organization: Institute of Experimental Physics, Faculty of Physics – sequence: 6 givenname: Marta orcidid: 0000-0002-3296-0423 surname: Gryglas-Borysiewicz fullname: Gryglas-Borysiewicz, Marta organization: Institute of Experimental Physics, Faculty of Physics – sequence: 7 givenname: Zuzanna surname: Ogorzałek fullname: Ogorzałek, Zuzanna organization: Institute of Experimental Physics, Faculty of Physics – sequence: 8 givenname: Rafał orcidid: 0000-0003-0327-2071 surname: Bożek fullname: Bożek, Rafał organization: Institute of Experimental Physics, Faculty of Physics – sequence: 9 givenname: Wojciech orcidid: 0000-0001-8329-5278 surname: Pacuski fullname: Pacuski, Wojciech organization: Institute of Experimental Physics, Faculty of Physics |
BackLink | https://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-116643$$DView record from Swedish Publication Index |
BookMark | eNp1kMFLwzAUh4NMcJueveaoSGfSNml7nHObwkRhU48hTV9mR9uUpGX2v7dj05un9-B9vx-8b4QGlakAoWtKJpT49F4qN1HbbOIrQjhPztCQMj_2IkbY4HcP4-ACjZzbEUIiHgRDZNaNbVXTWlngN2tqsE0ODhuNN3Lq8Cd0BV5DmZfQ9MTmK6_wIi9Kh5fW7CucdvjFFKDaQlr8ALLE8zpv5HeHTYWXfcMNIfQWr9vUNVY24C7RuZaFg6vTHKP3xXwze_JWr8vn2XTlyYDxxgOVpglPIx1xlrA4TDVInmRK6YxEDDIVhKA1EO3z1A95ENOE-SymIaU6jnwZjJF37HV7qNtU1DYvpe2Ekbl4zD-mwtitKKpWUMp5GPT8_ZFX1jhnQf8lKBEHv6L3K3q_4uS3T9wdE4fDzrS26v_5l_4BxDGARw |
CitedBy_id | crossref_primary_10_1103_PhysRevMaterials_8_034204 crossref_primary_10_1515_nanoph_2023_0520 crossref_primary_10_1016_j_matt_2023_06_018 crossref_primary_10_1088_1674_1056_acb913 crossref_primary_10_1007_s11431_023_2478_0 crossref_primary_10_3390_cryst13040578 crossref_primary_10_1364_JOSAB_495725 crossref_primary_10_3390_molecules29122825 crossref_primary_10_1016_j_matt_2023_08_004 |
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ContentType | Journal Article |
Copyright | 2022 The Authors. Published by American Chemical Society |
Copyright_xml | – notice: 2022 The Authors. Published by American Chemical Society |
DBID | AAYXX CITATION ADTPV AGRUY AOWAS D8T D92 ZZAVC |
DOI | 10.1021/acs.cgd.2c00669 |
DatabaseName | CrossRef SwePub SWEPUB Linnéuniversitetet full text SwePub Articles SWEPUB Freely available online SWEPUB Linnéuniversitetet SwePub Articles full text |
DatabaseTitle | CrossRef |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Chemistry |
EISSN | 1528-7505 |
EndPage | 6045 |
ExternalDocumentID | oai_DiVA_org_lnu_116643 10_1021_acs_cgd_2c00669 h58884666 |
GroupedDBID | -~X 4.4 55A 5GY 5VS 6J9 7~N AABXI ABFRP ABMVS ABPTK ABUCX ACGFS ACS ADHLV AEESW AENEX AFEFF AHGAQ ALMA_UNASSIGNED_HOLDINGS AQSVZ CS3 DU5 EBS ED~ F5P GGK GNL IH9 JG~ P2P RNS ROL TN5 UI2 VF5 VG9 W1F AAYXX ABJNI ABQRX BAANH CITATION CUPRZ ADTPV AFFNX AGRUY AOWAS D8T D92 EJD IHE LG6 ZZAVC |
ID | FETCH-LOGICAL-a356t-ecbb96b7f7659584bfea69dccfd075edc34effe0f26b246381952581411f872a3 |
IEDL.DBID | ACS |
ISSN | 1528-7483 1528-7505 |
IngestDate | Sat Aug 24 00:22:22 EDT 2024 Fri Aug 23 01:22:35 EDT 2024 Thu Oct 13 01:41:15 EDT 2022 |
IsDoiOpenAccess | true |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 10 |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-a356t-ecbb96b7f7659584bfea69dccfd075edc34effe0f26b246381952581411f872a3 |
ORCID | 0000-0001-8329-5278 0000-0003-0327-2071 0000-0002-9495-2648 0000-0002-3532-5708 0000-0003-4675-0010 0000-0002-3296-0423 0000-0002-7074-2283 |
OpenAccessLink | https://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-116643 |
PageCount | 7 |
ParticipantIDs | swepub_primary_oai_DiVA_org_lnu_116643 crossref_primary_10_1021_acs_cgd_2c00669 acs_journals_10_1021_acs_cgd_2c00669 |
PublicationCentury | 2000 |
PublicationDate | 2022-10-05 |
PublicationDateYYYYMMDD | 2022-10-05 |
PublicationDate_xml | – month: 10 year: 2022 text: 2022-10-05 day: 05 |
PublicationDecade | 2020 |
PublicationTitle | Crystal growth & design |
PublicationTitleAlternate | Cryst. Growth Des |
PublicationYear | 2022 |
Publisher | American Chemical Society |
Publisher_xml | – name: American Chemical Society |
References | ref9/cit9 ref6/cit6 ref3/cit3 ref27/cit27 ref18/cit18 ref11/cit11 ref25/cit25 ref16/cit16 ref23/cit23 ref14/cit14 ref8/cit8 ref5/cit5 ref2/cit2 ref20/cit20 ref17/cit17 ref10/cit10 ref26/cit26 ref19/cit19 ref21/cit21 ref12/cit12 ref15/cit15 ref22/cit22 ref13/cit13 ref4/cit4 ref1/cit1 ref24/cit24 ref7/cit7 |
References_xml | – ident: ref24/cit24 doi: 10.1103/PhysRevB.93.245152 – ident: ref16/cit16 doi: 10.1063/1.4801508 – ident: ref7/cit7 doi: 10.1103/PhysRevLett.117.056805 – ident: ref20/cit20 doi: 10.1016/0022-5088(76)90220-4 – ident: ref23/cit23 doi: 10.1039/D1TC05733B – ident: ref26/cit26 doi: 10.1002/pssb.201451612 – ident: ref18/cit18 doi: 10.1103/PhysRevB.100.115138 – ident: ref22/cit22 doi: 10.1002/(SICI)1521-396X(199901)171:1<289::AID-PSSA289>3.0.CO;2-2 – ident: ref19/cit19 doi: 10.1007/s11467-016-0609-y – ident: ref10/cit10 doi: 10.1038/s41467-017-02237-1 – ident: ref9/cit9 doi: 10.1103/PhysRevB.93.161112 – ident: ref5/cit5 doi: 10.1038/ncomms8373 – ident: ref25/cit25 doi: 10.1016/j.surfrep.2005.10.001 – ident: ref4/cit4 doi: 10.1103/PhysRevX.5.011029 – ident: ref14/cit14 doi: 10.1103/PhysRevLett.118.096603 – ident: ref17/cit17 doi: 10.1103/PhysRevMaterials.4.014409 – ident: ref13/cit13 doi: 10.1038/ncomms10735 – ident: ref2/cit2 doi: 10.1103/PhysRevX.5.031013 – ident: ref6/cit6 doi: 10.1103/PhysRevLett.117.066402 – ident: ref21/cit21 doi: 10.1021/acsnano.9b09997 – ident: ref12/cit12 doi: 10.1146/annurev-conmatphys-031016-025225 – ident: ref1/cit1 doi: 10.1126/science.aaa9297 – ident: ref15/cit15 doi: 10.1103/PhysRevB.97.184403 – ident: ref27/cit27 doi: 10.1088/1361-648X/aa9a75 – ident: ref11/cit11 doi: 10.1103/PhysRevB.105.L081114 – ident: ref3/cit3 doi: 10.1073/pnas.15.4.323 – ident: ref8/cit8 doi: 10.1038/nphys3425 |
SSID | ssj0007633 |
Score | 2.504693 |
Snippet | Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are... |
SourceID | swepub crossref acs |
SourceType | Open Access Repository Aggregation Database Publisher |
StartPage | 6039 |
SubjectTerms | Condensed Matter Physics Kondenserade materians fysik |
Title | Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates |
URI | http://dx.doi.org/10.1021/acs.cgd.2c00669 https://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-116643 |
Volume | 22 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjZ3JTsMwEIYtKAfgwI7YNQeE4JCSOIlbH0uhICQQUtluUezYCNGmiLQS5emZcRc2IbhGjhN5bM8_8eQbxnaFDm0QZxItEFS9KFaZJ43ve1ZGYWYDZYSlQPHiUpzdROf38f0HLPr7CT4PDlONg_-Qlbkm9ygn2RSn_EFSQfXmeNPFZeJy6WPu8JjhmOLzowNyQ7r44oa-QEKdY2nMD1KyCscjpHySp3Kvq8r67Set8e93XmBzQ3kJtcF8WGQTJl9i0_VRVbclNvsJQLjMOk2HjyX0BlzRZ_kX4qtCx8J1WivgzvRb0MR72wY1OlCNT2g8ttoFnFL0DqoPF6PyunBk0jacUBGS1z50cjjFHvbRPR0AbU4OglussJvGyXX9zBuWYPDSMBZdz2ilpFAVWyHuYDVS1qRCZlrbDLWGyXQYUd6Jb7lQPBIU_sU8rgZRENhqhafhKivlndysMUAp6CsZKm38NMqkVqHiGvUmagQlpIzX2S4OWzJcQkXiTsd5kNBFHMtkOJbrbH9kuOR5AOT4venewLDjhsTSPn68rSVorKSV9zD-ESjJNv736E02w-nnB5c-sMVKaCGzjZKkq3bcZHwHv53bHw |
link.rule.ids | 230,315,786,790,891,2782,27109,27957,27958,57093,57143 |
linkProvider | American Chemical Society |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV3fb9MwED6N7WHwAGyAGDC4hwmNh5TEid36sSvrOlgnUDvYWxQ7NppoU0Q6ie6v3537gw2EBK-Wcz75bN938fk7gD1lU5_IUpMFklaUSVNG2sVx5HWWlj4xTnkOFPunqneWvT-X52sQL9_CkBI1SarDJf4vdoHkLbfZr2VDWPaS-g5syCZF4wyGOoPV2Uu7JaTUSxFYMtMVmc8fAtgb2fqWN7rFFRr8S_cBfFppFtJKvjUup6Zhr34jbfwf1R_C_QXYxPZ8dWzBmqu2YbOzrPG2Dfdu0BE-gskgkMkyEQd-5J_0P5htFSceh0W7xi9uNsIBfTt2hNiRK35i92I0rvGIY3k0M-wvi-3igSvGeMglSX7OcFLhEUnYJ2f1BvmoCpS49WM46x4OO71oUZAhKlKpppGzxmhlmr7JLIStzHhXKF1a60tCHq60acZZKLEXyohMcTAohWwlWZL4VlMU6RNYryaVewpIwDA2OjXWxUVWamtSIyyhT0IMRmktd2CPpi1fbKg6D3flIsm5keYyX8zlDuwv7Zd_n9Nz_L3r67l9Vx2ZWfvdxed2TgbLR9UlRUOKANqzfxv6FWz2hv2T_OT49MNzuCv4WURILHgB62Qtt0tgZWpehvV5Dcwp44o |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LbxMxEB5BkXgceBQQ5TmHCpXDprvetRMfQ9q0PFpVSgO9rdYvVJFsKjaVCL-eGWcTURASXC2vPfJ4PN-sx98AbCubh0w6TRrIekkhjUu0T9Mk6CJ3ITNeBQ4Uj47V4bh4fybP2kdh_BaGhGhopCZe4rNVX7jQMgxku9xuv7iOsOwp9XW4Ibl8NwOiwWh9_pLFxLR6KSJTZr4m9PljAPZItrnika7whUYfM7wH47V0MbXka-dybjr2x2_Ejf8r_n2424JO7C93yQO45utNuDVY1XrbhDu_0BI-hNkoksoyIQee8M_6b8y6irOAp1W_wc9-McERfTv1hNyRK3_i8HwybfCAY3o0CzxaFd3Ft76a4j6XJvm-wFmNBzTCDjmtN8hHVqTGbR7BeLh_OjhM2sIMSZVLNU-8NUYr0w1dZiPsFSb4SmlnbXCEQLyzecHZKGkQyohCcVAohexlRZaFXldU-WPYqGe1fwJIADE1OjfWp1XhtDW5EZZQKCEHo7SWW7BNy1a2htWU8c5cZCU30lqW7Vpuwc5Kh-XFkqbj711fL3W87sgM23vnn_olKa2c1JcUFSkCak__bepXcPNkb1h-fHf84RncFvw6IuYXPIcNUpZ_QZhlbl7GLfoTLj_mBA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Structural+Properties+of+TaAs+Weyl+Semimetal+Thin+Films+Grown+by+Molecular+Beam+Epitaxy+on+GaAs%28001%29+Substrates&rft.jtitle=Crystal+growth+%26+design&rft.au=Sadowski%2C+Janusz&rft.au=Domagala%2C+Jaroslaw+Z.&rft.au=Zajkowska%2C+Wiktoria&rft.au=Kret%2C+Slawomir&rft.date=2022-10-05&rft.issn=1528-7483&rft.volume=22&rft.issue=10&rft.spage=6039&rft_id=info:doi/10.1021%2Facs.cgd.2c00669&rft.externalDocID=oai_DiVA_org_lnu_116643 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1528-7483&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1528-7483&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1528-7483&client=summon |