High-Performance Air-Stable n‑Type Carbon Nanotube Transistors with Erbium Contacts

• Published in: ACS nano Vol. 7; no. 9; pp. 8303 - 8308
• Main Authors: Shahrjerdi, Davood, Franklin, Aaron D, Oida, Satoshi, Ott, John A, Tulevski, George S, Haensch, Wilfried
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 24.09.2013
• Subjects: Carbon nanotubes; Deposition; Devices; Erbium; Evaporation; Semiconductor devices; Tasks; Transistors; Work functions; carbon nanotube; low work function metals; device yield; n-type transistors

So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metalserbium, lanthanum, and yttriumare studied and benchmark...