Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays

• Published in: Crystal growth & design Vol. 18; no. 2; pp. 1191 - 1197
• Main Authors: Golam Sarwar, A. T. M, Leung, Benjamin, Wang, George T, Myers, Roberto C
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 07.02.2018
• Subjects: MATERIALS SCIENCE; NANOSCIENCE AND NANOTECHNOLOGY
• ISSN: 1528-7483; 1528-7505
• DOI: 10.1021/acs.cgd.7b01725

By using multiple growth steps that separate the nucleation and growth processes, we show that nearly intrinsic InN single nanocrystals of high optical quality can be formed on patterned GaN nanowire arrays by molecular beam epitaxy. The InN nanostructures form into well-defined hexagonal prisms with pyramidal tops. Micro-photoluminescence (μ-PL) is carried out at low temperature (LT: 28.2 K) and room temperature (RT: 285 K) to gauge the relative material quality of the InN nanostructures. Nanopyramidal prisms grown using a three-step growth method are found to show superior quantum efficiency. Excitation and temperature dependent μ-PL demonstrates the very high quality and nearly intrinsic nature of the ordered InN nanostructure arrays.