Characterization of V‑Shaped Defects Formed during the 4H-SiC Solution Growth by Transmission Electron Microscopy and X‑ray Topography Analysis

• Published in: Crystal growth & design Vol. 16; no. 9; pp. 5136 - 5140
• Main Authors: Xiao, Shiyu, Harada, Shunta, Murayama, Kenta, Ujihara, Toru
• Format: Journal Article
• Language: English
• Published: American Chemical Society 07.09.2016

Defects generated during 4H-SiC (0001) solution growth have been investigated by synchrotron X-ray topography and transmission electron microscopy (TEM). The defects unidentified before are recognized as V-shaped contrast features in the X-ray topographic images. The detailed analysis combining TEM...