Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

• Published in: Nano letters Vol. 20; no. 3; pp. 1707 - 1717
• Main Authors: Varghese, Abin, Saha, Dipankar, Thakar, Kartikey, Jindal, Vishwas, Ghosh, Sayantan, Medhekar, Nikhil V, Ghosh, Sandip, Lodha, Saurabh
• Format: Journal Article
• Language: English
• Published: American Chemical Society 11.03.2020
• Subjects: ultrafast photodetection; van der Waals heterostructure; interlayer bandgap; pn heterojunction; near-direct bandgap; infrared photodetection

Pn heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current-rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct heterointerface bandgap for enhanced photogeneration in high light-absorbing few-layer vdW materials r...