Aligned Epitaxial SnO2 Nanowires on Sapphire: Growth and Device Applications

• Published in: Nano letters Vol. 14; no. 6; pp. 3014 - 3022
• Main Authors: Wang, Xiaoli, Aroonyadet, Noppadol, Zhang, Yuzheng, Mecklenburg, Matthew, Fang, Xin, Chen, Haitian, Goo, Edward, Zhou, Chongwu
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 11.06.2014
• Subjects: Aluminum Oxide - chemistry; Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Methods of nanofabrication; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanowires - chemistry; Nanowires - ultrastructure; Nitric Oxide - analysis; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Tin Compounds - chemistry; Transistors; tin oxide; Nanowire; epitaxy; guided growth; Epitaxial layers; Field effect transistors; Epitaxy; Light emitting diodes; Photodetectors; Nanoelectronics; Nanowire device; High field; Organic light emitting diodes; Nanowires; Nitrogen dioxide; Photoconductivity; Gas sensors; Nanostructured materials; Gas detector; Nanomaterial synthesis

Semiconducting SnO2 nanowires have been used to demonstrate high-quality field-effect transistors, optically transparent devices, photodetectors, and gas sensors. However, controllable assembly of rutile SnO2 nanowires is necessary for scalable and practical device applications. Here, we demonstrate...