Mono- and Bilayer WS2 Light-Emitting Transistors

• Published in: Nano letters Vol. 14; no. 4; pp. 2019 - 2025
• Main Authors: Jo, Sanghyun, Ubrig, Nicolas, Berger, Helmuth, Kuzmenko, Alexey B, Morpurgo, Alberto F
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 09.04.2014
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Molecular electronics, nanoelectronics; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; light-emitting transistor; ionic liquid gating; ambipolar transport; transition metal dichalcogenides; 2D Crystals; WS2; Monolayer; Electronic properties; Transport properties; Charge carrier density; Transition metal; Nanoelectronics; Field effect transistor; Energy gap; Light emission; Binding energy; Optical properties; Quantitative analysis; Bilayers

We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices for both electron and hole accumulation, whi...