Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides
2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the s...
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| Published in | ACS nano Vol. 10; no. 2; pp. 1738 - 1743 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
23.02.2016
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| Subjects | |
| Online Access | Get full text |
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| Abstract | 2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3–3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS3 are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties. |
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| AbstractList | 2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3-3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS3 are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties. 2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3-3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS3 are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties.2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3-3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS3 are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties. |
| Author | Du, Ke-zhao Hu, Peng Wang, Xing-zhi Liu, Yang Kloc, Christian Xiong, Qihua Utama, M. Iqbal Bakti Gan, Chee Kwan |
| AuthorAffiliation | School of Materials Science & Engineering Division of Physics and Applied Physics, School of Physical and Mathematical Sciences Institute of High Performance Computing, Agency for Science, Technology and Research NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering Nanyang Technological University |
| AuthorAffiliation_xml | – name: Institute of High Performance Computing, Agency for Science, Technology and Research – name: School of Materials Science & Engineering – name: NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering – name: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences – name: Nanyang Technological University |
| Author_xml | – sequence: 1 givenname: Ke-zhao surname: Du fullname: Du, Ke-zhao – sequence: 2 givenname: Xing-zhi surname: Wang fullname: Wang, Xing-zhi – sequence: 3 givenname: Yang surname: Liu fullname: Liu, Yang – sequence: 4 givenname: Peng surname: Hu fullname: Hu, Peng – sequence: 5 givenname: M. Iqbal Bakti surname: Utama fullname: Utama, M. Iqbal Bakti – sequence: 6 givenname: Chee Kwan surname: Gan fullname: Gan, Chee Kwan – sequence: 7 givenname: Qihua surname: Xiong fullname: Xiong, Qihua email: qihua@ntu.edu.sg – sequence: 8 givenname: Christian surname: Kloc fullname: Kloc, Christian email: ckloc@ntu.edu.sg |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/26607168$$D View this record in MEDLINE/PubMed |
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