Buckling-Based Method for Measuring the Strain–Photonic Coupling Effect of GaAs Nanoribbons

The ability to continuously and reversibly tune the band gap and the strain–photonic coupling effect in optoelectronic materials is highly desirable for fundamentally understanding the mechanism of strain engineering and its applications in semiconductors. However, optoelectronic materials (i.e., Ga...

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Published inACS nano Vol. 10; no. 9; pp. 8199 - 8206
Main Authors Wang, Yuxuan, Chen, Ying, Li, Haicheng, Li, Xiaomin, Chen, Hang, Su, Honghong, Lin, Yuan, Xu, Yun, Song, Guofeng, Feng, Xue
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 27.09.2016
Subjects
nanoribbons
strain−photonic coupling
buckling
optoelectronic material
band gap
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Abstract The ability to continuously and reversibly tune the band gap and the strain–photonic coupling effect in optoelectronic materials is highly desirable for fundamentally understanding the mechanism of strain engineering and its applications in semiconductors. However, optoelectronic materials (i.e., GaAs) with their natural brittleness cannot be subject to direct mechanical loading processes, such as tension or compression. Here, we report a strategy to induce continuous strain distribution in GaAs nanoribbons by applying structural buckling. Wavy GaAs nanoribbons are fabricated by transfer printing onto a prestrained soft substrate, and then the corresponding photoluminescence is measured to investigate the strain–photonic coupling effect. Theoretical analysis shows the evolution of the band gap due to strain and it is consistent with the experiments. The results demonstrate the potential application of a buckling configuration to delicately measure and tune the band gap and optoelectronic performance.
AbstractList The ability to continuously and reversibly tune the band gap and the strain-photonic coupling effect in optoelectronic materials is highly desirable for fundamentally understanding the mechanism of strain engineering and its applications in semiconductors. However, optoelectronic materials (i.e., GaAs) with their natural brittleness cannot be subject to direct mechanical loading processes, such as tension or compression. Here, we report a strategy to induce continuous strain distribution in GaAs nanoribbons by applying structural buckling. Wavy GaAs nanoribbons are fabricated by transfer printing onto a prestrained soft substrate, and then the corresponding photoluminescence is measured to investigate the strain-photonic coupling effect. Theoretical analysis shows the evolution of the band gap due to strain and it is consistent with the experiments. The results demonstrate the potential application of a buckling configuration to delicately measure and tune the band gap and optoelectronic performance.
Author Chen, Hang
Lin, Yuan
Li, Haicheng
Su, Honghong
Feng, Xue
Xu, Yun
Chen, Ying
Song, Guofeng
Li, Xiaomin
Wang, Yuxuan
AuthorAffiliation Institute of Semiconductors
Tsinghua University
State Key Laboratory of Electronic Thin Films and Integrated Devices
University of Electronic Science and Technology of China
AML, Department of Engineering Mechanics
Center for Mechanics and Materials
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Keywords nanoribbons
strain−photonic coupling
buckling
optoelectronic material
band gap
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Title Buckling-Based Method for Measuring the Strain–Photonic Coupling Effect of GaAs Nanoribbons
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