Interfacial Properties of Organic Semiconductor–Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition
We report fabrication of a hybrid organic semiconductor–inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstr...
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Published in | ACS applied materials & interfaces Vol. 7; no. 40; pp. 22228 - 22237 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
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American Chemical Society
14.10.2015
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Abstract | We report fabrication of a hybrid organic semiconductor–inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium–tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene–LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlO x layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices. |
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AbstractList | We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices. We report fabrication of a hybrid organic semiconductor–inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium–tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene–LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlO x layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices. We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices. |
Author | Dahl, Johnny Majumdar, Sayani Grochowska, Katarzyna Śliwiński, Gerard Sawczak, Miroslaw Huhtinen, Hannu Tuominen, Marjukka Laukkanen, Pekka Majumdar, Himadri S |
AuthorAffiliation | Aalto University School of Science Photophysics Department University of Turku Materials Research Laboratory, Department of Physics and Astronomy VTT Technical Research Center of Finland Department of Applied Physics The Szewalski Institute, Polish Academy of Sciences Wihuri Physical Laboratory, Department of Physics and Astronomy |
AuthorAffiliation_xml | – name: Materials Research Laboratory, Department of Physics and Astronomy – name: VTT Technical Research Center of Finland – name: Department of Applied Physics – name: The Szewalski Institute, Polish Academy of Sciences – name: University of Turku – name: Wihuri Physical Laboratory, Department of Physics and Astronomy – name: Aalto University School of Science – name: Photophysics Department |
Author_xml | – sequence: 1 givenname: Sayani surname: Majumdar fullname: Majumdar, Sayani email: sayani.majumdar@aalto.fi – sequence: 2 givenname: Katarzyna surname: Grochowska fullname: Grochowska, Katarzyna – sequence: 3 givenname: Miroslaw surname: Sawczak fullname: Sawczak, Miroslaw – sequence: 4 givenname: Gerard surname: Śliwiński fullname: Śliwiński, Gerard – sequence: 5 givenname: Hannu surname: Huhtinen fullname: Huhtinen, Hannu – sequence: 6 givenname: Johnny surname: Dahl fullname: Dahl, Johnny – sequence: 7 givenname: Marjukka surname: Tuominen fullname: Tuominen, Marjukka – sequence: 8 givenname: Pekka surname: Laukkanen fullname: Laukkanen, Pekka – sequence: 9 givenname: Himadri S surname: Majumdar fullname: Majumdar, Himadri S |
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CitedBy_id | crossref_primary_10_1016_j_apsusc_2017_01_281 crossref_primary_10_1063_1_5006387 crossref_primary_10_1002_ejic_201900231 crossref_primary_10_1088_0022_3727_49_36_365001 crossref_primary_10_3390_ma14164413 crossref_primary_10_1103_PhysRevB_99_054406 crossref_primary_10_1016_j_jmmm_2020_166812 crossref_primary_10_1021_acs_jpcc_9b11241 crossref_primary_10_1016_j_apsusc_2020_148419 |
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Snippet | We report fabrication of a hybrid organic semiconductor–inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using... We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using... |
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Title | Interfacial Properties of Organic Semiconductor–Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition |
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